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CEL (California Eastern Laboratories) NE85639-T1-R28-A RF BJT

NE85639-T1-R28-A by CEL (California Eastern Laboratories) · RF BJT · SOT-143

In StockCEL (California Eastern Laboratories)SOT-143
NE85639-T1-R28-A SOT-143 package illustration

Same model may have multiple batches, images only for reference.

NE85639-T1-R28-A
Part Number (MPN)
NE85639-T1-R28-A
Package
SOT-143
Lifecycle Status
Obsolete
Datasheet
PDF NE85639-T1-R28-A Datasheet
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Technical Specifications

CEL (California Eastern Laboratories) NE85639-T1-R28-A RF BJT technical specifications.

General

Package / Case
Tape & Reel
Mounting Type
Surface Mount
Operating Temperature
150°C (TJ)
Lifecycle Status
Obsolete
Current Collector IC Max
100 mA
Dc Current Gain Hfe Min IC Vce
50 @ 20mA, 10V
Frequency Transition
9 GHz
Gain
13dB
Noise Figure Db Typ F
1.1dB @ 1GHz
Power Max
200 mW

Related Parts Comparison (NE85639-T1-R28-A vs NE664M04-T2-A vs NE461M02-T1-QR-AZ vs NE68019-A)

Side-by-side specifications of related catalog parts.

Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.

This PartRelated PartRelated PartRelated Part
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Operating Temperature150°C (TJ)150°C (TJ)150°C (TJ)150°C (TJ)
Lifecycle StatusObsoleteObsoleteObsoleteObsolete
Current Collector IC Max100 mA500mA250mA35mA
Dc Current Gain Hfe Min IC Vce50 @ 20mA, 10V40 @ 100mA, 3V60 @ 50mA, 10V80 @ 5mA, 3V
Gain13dB12dB8.3dB9.6dB
Power Max200 mW735mW2W100mW
Transistor TypeNPNNPNNPNNPN
Voltage Collector Emitter Breakdown Max12 V5V15V10V
Package / CaseTape & ReelSOT-343FTO-243AA--
Frequency Transition9 GHz20GHz--10GHz
Noise Figure Db Typ F1.1dB @ 1GHz--1.5dB ~ 2dB @ 500MHz ~ 1GHz1.9dB @ 2GHz
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