CEL (California Eastern Laboratories) NE85639-A RF BJT
NE85639-A by CEL (California Eastern Laboratories) · RF BJT · SOT-143
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
NE85639-A
Package
SOT-143
Lifecycle Status
Obsolete
Datasheet
NE85639-A Datasheet
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Technical Specifications
CEL (California Eastern Laboratories) NE85639-A RF BJT technical specifications.
General
Package / Case
Bulk
Mounting Type
Surface Mount
Operating Temperature
150°C (TJ)
Lifecycle Status
Obsolete
Current Collector IC Max
100 mA
Dc Current Gain Hfe Min IC Vce
50 @ 20mA, 10V
Frequency Transition
9 GHz
Gain
13dB
Noise Figure Db Typ F
1.1dB @ 1GHz
Power Max
200 mW
Alternate Parts Comparison (NE85639-A vs NE664M04-T2-A vs NE461M02-T1-QR-AZ vs NE68019-A)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Operating Temperature | 150°C (TJ) | 150°C (TJ) | 150°C (TJ) | 150°C (TJ) |
| Lifecycle Status | Obsolete | Obsolete | Obsolete | Obsolete |
| Current Collector IC Max | 100 mA | 500mA | 250mA | 35mA |
| Dc Current Gain Hfe Min IC Vce | 50 @ 20mA, 10V | 40 @ 100mA, 3V | 60 @ 50mA, 10V | 80 @ 5mA, 3V |
| Gain | 13dB | 12dB | 8.3dB | 9.6dB |
| Power Max | 200 mW | 735mW | 2W | 100mW |
| Transistor Type | NPN | NPN | NPN | NPN |
| Voltage Collector Emitter Breakdown Max | 12 V | 5V | 15V | 10V |
| Package / Case | Bulk | SOT-343F | TO-243AA | -- |
| Frequency Transition | 9 GHz | 20GHz | -- | 10GHz |
| Noise Figure Db Typ F | 1.1dB @ 1GHz | -- | 1.5dB ~ 2dB @ 500MHz ~ 1GHz | 1.9dB @ 2GHz |
| Action |
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