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CEL (California Eastern Laboratories) NE851M33-A RF BJT

NE851M33-A by CEL (California Eastern Laboratories) · RF BJT · 3-SuperMiniMold (M33)

In StockCEL (California Eastern Laboratories)3-SuperMiniMold (M33)
NE851M33-A 3-SuperMiniMold (M33) package illustration

Same model may have multiple batches, images only for reference.

NE851M33-A
Part Number (MPN)
NE851M33-A
Package
3-SuperMiniMold (M33)
Lifecycle Status
Obsolete
Datasheet
PDF NE851M33-A Datasheet
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Technical Specifications

CEL (California Eastern Laboratories) NE851M33-A RF BJT technical specifications.

General

Package / Case
Bulk
Mounting Type
Surface Mount
Operating Temperature
150°C (TJ)
Lifecycle Status
Obsolete
Current Collector IC Max
100 mA
Dc Current Gain Hfe Min IC Vce
100 @ 5mA, 1V
Frequency Transition
4.5 GHz
Noise Figure Db Typ F
1.9dB ~ 2.5dB @ 2GHz
Power Max
130 mW
Transistor Type
NPN

Related Parts Comparison (NE851M33-A vs NE664M04-T2-A vs NE461M02-T1-QR-AZ vs NE68019-A)

Side-by-side specifications of related catalog parts.

Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.

This PartRelated PartRelated PartRelated Part
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Operating Temperature150°C (TJ)150°C (TJ)150°C (TJ)150°C (TJ)
Lifecycle StatusObsoleteObsoleteObsoleteObsolete
Current Collector IC Max100 mA500mA250mA35mA
Dc Current Gain Hfe Min IC Vce100 @ 5mA, 1V40 @ 100mA, 3V60 @ 50mA, 10V80 @ 5mA, 3V
Power Max130 mW735mW2W100mW
Transistor TypeNPNNPNNPNNPN
Voltage Collector Emitter Breakdown Max5.5 V5V15V10V
Package / CaseBulkSOT-343FTO-243AA--
Frequency Transition4.5 GHz20GHz--10GHz
Noise Figure Db Typ F1.9dB ~ 2.5dB @ 2GHz--1.5dB ~ 2dB @ 500MHz ~ 1GHz1.9dB @ 2GHz
Gain--12dB8.3dB9.6dB
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