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CEL (California Eastern Laboratories) NE68730-T1 RF BJT

NE68730-T1 by CEL (California Eastern Laboratories) · RF BJT · SC-70, SOT-323

In StockCEL (California Eastern Laboratories)SC-70, SOT-323
NE68730-T1 SC-70, SOT-323 package illustration

Same model may have multiple batches, images only for reference.

NE68730-T1
Part Number (MPN)
NE68730-T1
Package
SC-70, SOT-323
Lifecycle Status
Obsolete
Datasheet
PDF NE68730-T1 Datasheet
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Technical Specifications

CEL (California Eastern Laboratories) NE68730-T1 RF BJT technical specifications.

General

RoHS
Yes
Mounting Type
Surface Mount
Lifecycle Status
Obsolete
Transistor Type
NPN
Voltage Collector Emitter Breakdown Max
3V
Frequency Transition
11GHz
Noise Figure Db Typ F
1.3dB ~ 2dB @ 2GHz
Power Max
90mW
Dc Current Gain Hfe Min IC Vce
70 @ 20mA, 2V
Current Collector IC Max
30mA

Alternate Parts Comparison (NE68730-T1 vs NE664M04-T2-A vs NE461M02-T1-QR-AZ vs NE68019-A)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
RoHSYesYesYesYes
Lifecycle StatusObsoleteObsoleteObsoleteObsolete
Current Collector IC Max30mA500mA250mA35mA
Dc Current Gain Hfe Min IC Vce70 @ 20mA, 2V40 @ 100mA, 3V60 @ 50mA, 10V80 @ 5mA, 3V
PackageSC-70, SOT-323Tape & Reel (TR)Tape & Reel (TR)SOT-523
Power Max90mW735mW2W100mW
Transistor TypeNPNNPNNPNNPN
Voltage Collector Emitter Breakdown Max3V5V15V10V
Frequency Transition11GHz20GHz--10GHz
Noise Figure Db Typ F1.3dB ~ 2dB @ 2GHz--1.5dB ~ 2dB @ 500MHz ~ 1GHz1.9dB @ 2GHz
Operating Temperature--150°C (TJ)150°C (TJ)150°C (TJ)
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