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CEL (California Eastern Laboratories) NE68133-T1B-A RF BJT

NE68133-T1B-A by CEL (California Eastern Laboratories) · RF BJT · TO-236-3

In StockCEL (California Eastern Laboratories)TO-236-3
NE68133-T1B-A TO-236-3 package illustration

Same model may have multiple batches, images only for reference.

NE68133-T1B-A
Part Number (MPN)
NE68133-T1B-A
Package
TO-236-3
Lifecycle Status
Obsolete
Datasheet
PDF NE68133-T1B-A Datasheet
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Technical Specifications

CEL (California Eastern Laboratories) NE68133-T1B-A RF BJT technical specifications.

General

RoHS
Yes
Mounting Type
Surface Mount
Operating Temperature
150°C (TJ)
Lifecycle Status
Obsolete
Transistor Type
NPN
Voltage Collector Emitter Breakdown Max
10V
Frequency Transition
9GHz
Noise Figure Db Typ F
1.2dB @ 1GHz
Gain
13dB
Power Max
200mW

Alternate Parts Comparison (NE68133-T1B-A vs NE664M04-T2-A vs NE461M02-T1-QR-AZ vs NE68019-A)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Operating Temperature150°C (TJ)150°C (TJ)150°C (TJ)150°C (TJ)
RoHSYesYesYesYes
Lifecycle StatusObsoleteObsoleteObsoleteObsolete
Current Collector IC Max65mA500mA250mA35mA
Dc Current Gain Hfe Min IC Vce50 @ 20mA, 8V40 @ 100mA, 3V60 @ 50mA, 10V80 @ 5mA, 3V
Gain13dB12dB8.3dB9.6dB
PackageTO-236-3Tape & Reel (TR)Tape & Reel (TR)SOT-523
Power Max200mW735mW2W100mW
Transistor TypeNPNNPNNPNNPN
Voltage Collector Emitter Breakdown Max10V5V15V10V
Frequency Transition9GHz20GHz--10GHz
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