CEL (California Eastern Laboratories) 2SC5013-A RF BJT
2SC5013-A by CEL (California Eastern Laboratories) · RF BJT
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
2SC5013-A
Lifecycle Status
Obsolete
Datasheet
2SC5013-A Datasheet
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Technical Specifications
CEL (California Eastern Laboratories) 2SC5013-A RF BJT technical specifications.
General
Package / Case
Strip
Mounting Type
Surface Mount
Operating Temperature
150°C (TJ)
Lifecycle Status
Obsolete
Current Collector IC Max
35 mA
Dc Current Gain Hfe Min IC Vce
50 @ 10mA, 6V
Frequency Transition
10 GHz
Gain
9.5dB
Noise Figure Db Typ F
1.8dB @ 2GHz
Power Max
150 mW
Alternate Parts Comparison (2SC5013-A vs 2SC5015-T1-A vs 2SC5508-T2-A vs NESG2107M33-A)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | Strip | SC-82A, SOT-343 | SOT-343F | 3-SMD, Flat Lead |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Operating Temperature | 150°C (TJ) | 150°C (TJ) | 150°C (TJ) | 150°C (TJ) |
| Current Collector IC Max | 35 mA | 30mA | 35mA | 100mA |
| Dc Current Gain Hfe Min IC Vce | 50 @ 10mA, 6V | 75 @ 10mA, 3V | 50 @ 5mA, 2V | 140 @ 5mA, 1V |
| Frequency Transition | 10 GHz | 12GHz | 25GHz | 10GHz |
| Gain | 9.5dB | 11dB | 17dB | 7dB ~ 10dB |
| Noise Figure Db Typ F | 1.8dB @ 2GHz | 1.5dB @ 2GHz | 1.1dB @ 2GHz | 0.9dB ~ 1.5dB @ 2GHz |
| Power Max | 150 mW | 150mW | 115mW | 130mW |
| Transistor Type | NPN | NPN | NPN | NPN |
| Voltage Collector Emitter Breakdown Max | 10 V | 6V | 3.3V | 5V |
| Action |
More Parts in RF BJT
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