Winbond Electronics W987D2HBJX7E DRAM
DRAM Memory IC 128Mbit Parallel 133 MHz 1.7V ~ 1.95V 90-VFBGA (8x13)
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
W987D2HBJX7E
Detailed Description
IC DRAM 128MBIT PAR 90VFBGA
Package
90-VFBGA (8x13)
Lifecycle Status
Not For New Designs
RoHS State
RoHS Compliant
Datasheet
W987D2HBJX7E Datasheet
Quick Jump:
Technical Specifications
Winbond Electronics W987D2HBJX7E DRAM technical specifications.
General
Memory Size
128 Mbit
RoHS
ROHS3 Compliant
Package / Case
90-TFBGA
Packaging
Tray
Mounting Type
Surface Mount
Operating Temperature
-25°C ~ 85°C (TC)
Supply Voltage
1.7V ~ 1.95V
Lifecycle Status
Not For New Designs
Max Frequency
133 MHz
Memory Type
Volatile
Alternate Parts Comparison (W987D2HBJX7E vs W9825G6KH-6 vs W987D2HBJX6E vs W949D2DBJX5I)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Operating Temperature | -25°C ~ 85°C (TC) | 0 ~ 70 | -25°C ~ 85°C (TC) | -40°C ~ 85°C (TA) |
| Supply Voltage | 1.7V ~ 1.95V | 3 ~ 3.6 | 1.7V ~ 1.95V | 1.7V ~ 1.95V |
| Memory Size | 128 Mbit | 256M | 128 Mbit | 512 Mbit |
| Lifecycle Status | Not For New Designs | Active | Last Time Buy | Active |
| Access Time | 5.4 ns | 6 ns | 5.4 ns | 5 ns |
| Memory Organization | 4M x 32 | 16 M x 16 | 4M x 32 | 16M x 32 |
| Package / Case | 90-TFBGA | -- | 90-TFBGA | 90-TFBGA |
| RoHS | ROHS3 Compliant | Compliant | -- | ROHS3 Compliant |
| Clock Frequency | 133 MHz | -- | 166 MHz | 200 MHz |
| Max Frequency | 133 MHz | -- | 166 MHz | 200 MHz |
| Memory Format | DRAM | -- | DRAM | DRAM |
| Action |
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