Vishay TCET1109G BJTs
Optocoupler Phototransistor Out 5kV Isolation 70V VCEO 400% CTR
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
TCET1109G
Detailed Description
Optocoupler Phototransistor Out 5kV Isolation 70V VCEO 400% CTR
Package
PDIP
Lifecycle Status
Active
Datasheet
TCET1109G Datasheet
Quick Jump:
Technical Specifications
Vishay TCET1109G BJTs technical specifications.
General
RoHS
Yes
Number of Pins
4
Number of Channels
1
Package / Case
PDIP
Mounting Type
Through Hole
Operating Temperature
-40°C ~ 100°C
Lifecycle Status
Active
Collector Emitter Saturation Voltage
300 mV
Collector Emitter Voltage Vceo
70 V
Collector Emitter Voltage Max
300 mV
Alternate Parts Comparison (TCET1109G vs TCET1103 vs TCET1109 vs IL250)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Number of Channels | 1 | 1 Channel | 1 Channel | 1 |
| RoHS | Yes | Yes | Yes | Yes |
| Collector Emitter Voltage Max | 300 mV | 70 V | 70 V | 400 mV |
| Current Transfer Ratio Min | 200% @ 5mA | 100 % | 200 % | 50% @ 10mA |
| Isolation Voltage | 5 kV | 5000 Vrms | 5000 Vrms | 5.3 kV |
| Output Type | Transistor | NPN Phototransistor | NPN Phototransistor | Transistor with Base |
| Current Transfer Ratio | 400 % | 100 % | 200 % | -- |
| Current Transfer Ratio Max | 400% @ 5mA | 200 % | 400 % | -- |
| Action |
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