Vishay TCET1109 BJTs
OPTOISOLATR 5KV TRANSISTOR 4-DIP
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
TCET1109
Detailed Description
OPTOISOLATR 5KV TRANSISTOR 4-DIP
Package
4-DIP
Lifecycle Status
Active
Datasheet
TCET1109 Datasheet
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Technical Specifications
Vishay TCET1109 BJTs technical specifications.
General
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
Through Hole
Isolation Voltage
5000 Vrms
Output Type
NPN Phototransistor
Current Transfer Ratio Min
200 %
Current Transfer Ratio Max
400 %
Contact Current Rating
60 mA
Reference Voltage
1.6 V
Collector Emitter Voltage Max
70 V
Alternate Parts Comparison (TCET1109 vs TCET1103 vs SFH615A-4 vs SFH620A-1)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel | 1 Channel |
| RoHS | Yes | Yes | Yes | Yes |
| Collector Emitter Voltage Max | 70 V | 70 V | 70 V | 70 V |
| Configuration | 1 Channel | 1 Channel | 1 Channel | 1 Channel |
| Contact Current Rating | 60 mA | 60 mA | 60 mA | 60 mA |
| Current Transfer Ratio | 200 % | 100 % | 320 % | 40 % |
| Isolation Voltage | 5000 Vrms | 5000 Vrms | 5300 Vrms | 5300 Vrms |
| Maximum Collector Current | 50 mA | 50 mA | 100 mA | 100 mA |
| Maximum Collector Emitter Saturation Voltage | 300 mV | 300 mV | 400 mV | 400 mV |
| Maximum Operating Temperature C | + 100 | + 100 | + 100 | + 100 |
| Minimum Operating Temperature C | - 40 | - 40 | - 55 | - 55 |
| Action |
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