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Vishay SQSA80ENW-T1_GE3 MOSFETs

N-Channel MOSFET, 80V, 18A, 0.027 Ohm, 5-Terminal

3,011 ActiveVishayPowerPAK® 1212-8$1.90
SQSA80ENW-T1_GE3 - No Image Available

Same model may have multiple batches, images only for reference.

SQSA80ENW-T1_GE3
Manufacturer
Part Number (MPN)
SQSA80ENW-T1_GE3
Detailed Description
N-Channel MOSFET, 80V, 18A, 0.027 Ohm, 5-Terminal
Package
PowerPAK® 1212-8
Lifecycle Status
Active
Datasheet
PDF SQSA80ENW-T1_GE3 Datasheet
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Technical Specifications

Vishay SQSA80ENW-T1_GE3 MOSFETs technical specifications.

General

Series
Automotive, AEC-Q101, TrenchFET®
RoHS
Yes
Number of Pins
5
Number of Channels
1
Package / Case
PowerPAK® 1212-8
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 175°C (TJ)
Lifecycle Status
Active
Continuous Drain Current ID
18 A
Current Continuous Drain ID 25 C
18A (Tc)

Alternate Parts Comparison (SQSA80ENW-T1_GE3 vs SQ7415AEN-T1_BE3 vs SQS840EN-T1_GE3 vs SI7415DN-T1-E3)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
SeriesAutomotive, AEC-Q101, TrenchFET®TrenchFET®TrenchFET®TrenchFET®
Package / CasePowerPAK® 1212-8PowerPAK® 1212-8PowerPAK® 1212-8PowerPAK® 1212-8
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 150°C (TJ)
Lifecycle StatusActiveObsoleteActiveActive
Current Continuous Drain ID 25 C18A (Tc)16A (Tc)12A (Tc)3.6A (Ta)
Drain to Source Voltage Vdss80 V60 V40 V-60 V
Drive Voltage Max Rds on Min Rds on4.5V, 10V4.5V, 10V4.5V, 10V4.5V, 10V
Fet TypeN-ChannelP-ChannelN-ChannelP-Channel
Gate Charge Qg Max Vgs21 nC @ 10 V38 nC @ 10 V22.5 nC @ 10 V25 nC @ 10 V
Rds on Max ID Vgs21mOhm @ 10A, 10V65mOhm @ 5.7A, 10V20mOhm @ 7.5A, 10V65mOhm @ 5.7A, 10V
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
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