Vishay SIS427EDN-T1-GE3 MOSFETs
P-CH MOSFET -30V -50A 10.6mR Surface Mount
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SIS427EDN-T1-GE3
Detailed Description
P-CH MOSFET -30V -50A 10.6mR Surface Mount
Package
PowerPAK® 1212-8
Lifecycle Status
Active
Datasheet
SIS427EDN-T1-GE3 Datasheet
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Technical Specifications
Vishay SIS427EDN-T1-GE3 MOSFETs technical specifications.
General
Series
TrenchFET®
RoHS
Yes
Number of Pins
8
Number of Channels
1
Package / Case
PowerPAK® 1212-8
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Active
Continuous Drain Current ID
-50 A
Current Continuous Drain ID 25 C
50A (Tc)
Alternate Parts Comparison (SIS427EDN-T1-GE3 vs SIS443DN-T1-GE3 vs SIS476DN-T1-GE3 vs SQ7415AEN-T1_BE3)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Series | TrenchFET® | TrenchFET® | TrenchFET® | TrenchFET® |
| Package / Case | PowerPAK® 1212-8 | PowerPAK® 1212-8 | PowerPAK® 1212-8 | PowerPAK® 1212-8 |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) |
| Lifecycle Status | Active | Active | Active | Obsolete |
| Current Continuous Drain ID 25 C | 50A (Tc) | 35A (Tc) | 40A (Tc) | 16A (Tc) |
| Drain to Source Voltage Vdss | -30 V | 40 V | 30 V | 60 V |
| Drive Voltage Max Rds on Min Rds on | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V |
| Fet Type | P-Channel | P-Channel | N-Channel | P-Channel |
| Gate Charge Qg Max Vgs | 66 nC @ 10 V | 135 nC @ 10 V | 77 nC @ 10 V | 38 nC @ 10 V |
| Input Capacitance Ciss Max Vds | 1930 pF @ 15 V | 4370 pF @ 20 V | 3595 pF @ 15 V | 1385 pF @ 25 V |
| Rds on Max ID Vgs | 10.6mOhm @ 11A, 10V | 11.7mOhm @ 15A, 10V | 2.5mOhm @ 15A, 10V | 65mOhm @ 5.7A, 10V |
| Action |
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