Vishay SQJ980AEP-T1_GE3 MOSFETs
Power Field-Effect Transistor, 17A I(D), 75V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SO-8L, 4 PIN
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SQJ980AEP-T1_GE3
Detailed Description
Power Field-Effect Transistor, 17A I(D), 75V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SO-8L, 4 PIN
Package
PowerPAK® SO-8 Dual
Lifecycle Status
Active
Datasheet
SQJ980AEP-T1_GE3 Datasheet
Quick Jump:
Technical Specifications
Vishay SQJ980AEP-T1_GE3 MOSFETs technical specifications.
General
Series
Automotive, AEC-Q101, TrenchFET®
RoHS
Yes
Number of Pins
8
Package / Case
PowerPAK® SO-8 Dual
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 175°C (TA)
Lifecycle Status
Active
Continuous Drain Current ID
17 A
Current Continuous Drain ID 25 C
17A (Tc)
Drain to Source Resistance
41mO
Alternate Parts Comparison (SQJ980AEP-T1_GE3 vs SQJ956EP-T1_GE3 vs SQJ946EP-T1_GE3 vs SQJ990EP-T1_GE3)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Series | Automotive, AEC-Q101, TrenchFET® | TrenchFET® | TrenchFET® | TrenchFET® |
| Package / Case | PowerPAK® SO-8 Dual | PowerPAK® SO-8 Dual | PowerPAK® SO-8 Dual | PowerPAK® SO-8 Dual |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TA) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
| RoHS | Yes | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant |
| Lifecycle Status | Active | Active | Active | Active |
| Current Continuous Drain ID 25 C | 17A (Tc) | 23A (Tc) | 15A (Tc) | 34A (Tc) |
| Drain to Source Voltage Vdss | 75 V | 60 V | 40 V | 100 V |
| Fet Feature | Standard | Standard | Standard | Standard |
| Fet Type | 2 N-Channel (Dual) | 2 N-Channel (Dual) | 2 N-Channel (Dual) | 2 N-Channel (Dual) |
| Gate Charge Qg Max Vgs | 21nC @ 10V | 30nC @ 10V | 20nC @ 10V | 30nC @ 10V, 15nC @ 10V |
| Input Capacitance Ciss Max Vds | 790pF @ 35V | 1395pF @ 30V | 600pF @ 25V | 1390pF @ 25V, 650pF @ 25V |
| Action |
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