Vishay SQJ500AEP-T1_GE3 MOSFETs
Power Field-Effect Transistor,
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SQJ500AEP-T1_GE3
Detailed Description
Power Field-Effect Transistor,
Package
PowerPAK® SO-8 Dual
Lifecycle Status
Active
Datasheet
Quick Jump:
Technical Specifications
Vishay SQJ500AEP-T1_GE3 MOSFETs technical specifications.
General
Series
Automotive, AEC-Q101, TrenchFET®
RoHS
Yes
Package / Case
PowerPAK® SO-8 Dual
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 175°C (TJ)
Lifecycle Status
Active
Current Continuous Drain ID 25 C
30A (Tc)
Drain to Source Voltage Vdss
40 V
Fet Type
N and P-Channel
Gate Charge Qg Max Vgs
38.1nC @ 10V
Alternate Parts Comparison (SQJ500AEP-T1_GE3 vs SQJ992EP-T1_GE3 vs SQJ956EP-T1_GE3 vs SQJ946EP-T1_GE3)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Series | Automotive, AEC-Q101, TrenchFET® | TrenchFET® | TrenchFET® | TrenchFET® |
| Package / Case | PowerPAK® SO-8 Dual | PowerPAK® SO-8 Dual | PowerPAK® SO-8 Dual | PowerPAK® SO-8 Dual |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
| RoHS | Yes | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant |
| Lifecycle Status | Active | Active | Active | Active |
| Current Continuous Drain ID 25 C | 30A (Tc) | 15 A | 23A (Tc) | 15A (Tc) |
| Drain to Source Voltage Vdss | 40 V | 60 V | 60 V | 40 V |
| Fet Type | N and P-Channel | 2 N-Channel (Dual) | 2 N-Channel (Dual) | 2 N-Channel (Dual) |
| Gate Charge Qg Max Vgs | 38.1nC @ 10V | 12nC @ 10V | 30nC @ 10V | 20nC @ 10V |
| Input Capacitance Ciss Max Vds | 1850pF @ 20V | 446pF @ 30V | 1395pF @ 30V | 600pF @ 25V |
| Power Max | 48 W | 34 W | 34 W | 27 W |
| Action |
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