Vishay SQ2318AES-T1_GE3 MOSFETs
N-Ch JFET, 8A ID, 40V, 3-Pin TO-236AB
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SQ2318AES-T1_GE3
Base Model
Detailed Description
N-Ch JFET, 8A ID, 40V, 3-Pin TO-236AB
Package
SOT23-3
Lifecycle Status
Active
Datasheet
SQ2318AES-T1_GE3 Datasheet
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Technical Specifications
Vishay SQ2318AES-T1_GE3 MOSFETs technical specifications.
General
Series
TrenchFET®
RoHS
Yes
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 175°C (TJ)
Lifecycle Status
Active
Fet Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage Vdss
40 V
Current Continuous Drain ID 25 C
8A (Tc)
Drive Voltage Max Rds on Min Rds on
4.5V, 10V
Alternate Parts Comparison (SQ2318AES-T1_GE3 vs SQ2318AES-T1_BE3 vs SQ2361ES-T1_GE3 vs SI2333DS-T1-GE3)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | Yes | Compliant | Yes | Yes |
| Series | TrenchFET® | Automotive, AEC-Q101, TrenchFET® | -- | SI2 |
| Mounting Type | Surface Mount | Surface Mount | -- | SMD/SMT |
| Package | SOT23-3 | -- | SOT23-3 | SOT23-3 |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | -- | Si |
| Configuration | -- | Single | SINGLE WITH BUILT-IN DIODE | Single |
| Action |
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