Vishay SQ2309ES-T1-GE3 MOSFETs
Trans MOSFET P-CH 60V 1.7A Automotive 3-Pin SOT-23 T/R
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SQ2309ES-T1-GE3
Detailed Description
Trans MOSFET P-CH 60V 1.7A Automotive 3-Pin SOT-23 T/R
Package
SOT23-3
Lifecycle Status
Active
Datasheet
Quick Jump:
Technical Specifications
Vishay SQ2309ES-T1-GE3 MOSFETs technical specifications.
General
Series
SQ
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Technology
Si
Transistor Polarity
P-Channel
Vds Drain Source Breakdown Voltage
60 V
ID Continuous Drain Current
1.7 A
Rds on Drain Source Resistance
268 mOhms
Vgs Gate Source Voltage
- 20 V, + 20 V
Alternate Parts Comparison (SQ2309ES-T1-GE3 vs SI2316BDS-T1-E3 vs SI2333DS-T1-GE3 vs SI2305CDS-T1-GE3)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Series | SQ | SI2 | SI2 | SI2 |
| Mounting Type | SMD/SMT | SMD/SMT | SMD/SMT | SMD/SMT |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel | 1 Channel |
| RoHS | Yes | Yes | Yes | Yes |
| Channel Mode | Enhancement | Enhancement | Enhancement | Enhancement |
| Configuration | Single | Single | Single | Single |
| Fall Time | 9 ns | 7 ns | 60 ns | 10 ns |
| ID Continuous Drain Current | 1.7 A | 4.5 A | 4.1 A | 5.8 A |
| Package | SOT23-3 | SOT23-3 | SOT23-3 | SOT23-3 |
| Pd Power Dissipation | 2 W | 1.66 W | 750 mW | 1.7 W |
| Qg Gate Charge | 8.5 nC | 3.16 nC | 11.5 nC | 12 nC |
| Rds on Drain Source Resistance | 268 mOhms | 50 mOhms | 32 mOhms | 35 mOhms |
| Action |
Cross Reference
Manufacturer-stated alternates from official cross-reference tools. These are not a guaranteed pin-compatible drop-in. Qualify package, pinout, and electrical limits against the datasheet before a board change. See cross-reference vs drop-in compatible .
Suggested replacements
Similaronsemi
Pin YesPkg YesElec Mixed
P-Channel JFET, -60V, -1.1A, 230mΩ, TO-236
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