Vishay SIS407DN-T1-GE3 MOSFETs
P-CH MOSFET, -20V, -25A, 8.2mR, 33W, SMT
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SIS407DN-T1-GE3
Base Model
Detailed Description
P-CH MOSFET, -20V, -25A, 8.2mR, 33W, SMT
Package
PowerPAK®1212-8
Lifecycle Status
Active
Datasheet
SIS407DN-T1-GE3 Datasheet
Quick Jump:
Technical Specifications
Vishay SIS407DN-T1-GE3 MOSFETs technical specifications.
General
Series
SIS
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Technology
Si
Transistor Polarity
P-Channel
Vds Drain Source Breakdown Voltage
20 V
ID Continuous Drain Current
25 A
Rds on Drain Source Resistance
9.5 mOhms
Vgs Gate Source Voltage
- 8 V, + 8 V
Alternate Parts Comparison (SIS407DN-T1-GE3 vs SIS407DN vs SIS407ADN-T1-GE3 vs SIS413DN-T1-GE3)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Series | SIS | -- | SIS | SIS |
| Mounting Type | SMD/SMT | -- | SMD/SMT | SMD/SMT |
| Number of Channels | 1 Channel | -- | 1 Channel | 1 Channel |
| RoHS | Yes | -- | Yes | Yes |
| Channel Mode | Enhancement | -- | Enhancement | Enhancement |
| Configuration | Single | -- | Single | Single |
| Fall Time | 38 ns | -- | 36 ns | 8 ns |
| Forward Transconductance Min | 60 S | -- | 70 S | 50 S |
| ID Continuous Drain Current | 25 A | -- | 18 A | 18 A |
| Maximum Operating Temperature C | + 150 | -- | + 150 | + 150 |
| Minimum Operating Temperature C | - 55 | -- | - 55 | - 55 |
| Package | PowerPAK®1212-8 | -- | PowerPAK-1212-8 | PowerPAK-1212-8 |
| Action |
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