Vishay SIHP25N50E-GE3 MOSFETs
Power Field-Effect Transistor, 26A I(D), 500V, 0.145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SIHP25N50E-GE3
Detailed Description
Power Field-Effect Transistor, 26A I(D), 500V, 0.145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3
Package
TO-220AB-3
Lifecycle Status
Active
Datasheet
SIHP25N50E-GE3 Datasheet
Quick Jump:
Technical Specifications
Vishay SIHP25N50E-GE3 MOSFETs technical specifications.
General
Series
E
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
Through Hole
Operating Temperature
- 55°C ~ + 150°C
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
500 V
ID Continuous Drain Current
26 A
Rds on Drain Source Resistance
145 mOhms
Alternate Parts Comparison (SIHP25N50E-GE3 vs SIHP065N60E-GE3 vs SIHP33N60E-GE3 vs SIHP22N60E-GE3)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | Yes | Yes | Yes | Yes |
| Series | E | -- | E Series | E |
| Mounting Type | Through Hole | -- | Through Hole | Through Hole |
| Operating Temperature | - 55°C ~ + 150°C | -- | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Number of Channels | 1 Channel | -- | 1 | 1 |
| Fall Time | 29 ns | -- | 80 ns | 54 ns |
| Rise Time | 36 ns | -- | 90 ns | 68 ns |
| Technology | Si | -- | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Action |
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