Vishay IRF820PBF MOSFETs
N-Channel MOSFET, 500V, 2.5A, 3R, TO-220AB
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
IRF820PBF
Detailed Description
N-Channel MOSFET, 500V, 2.5A, 3R, TO-220AB
Package
TO-220AB-3
Lifecycle Status
Active
Datasheet
IRF820PBF Datasheet
Quick Jump:
Technical Specifications
Vishay IRF820PBF MOSFETs technical specifications.
General
Series
IRF
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
Through Hole
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
500 V
ID Continuous Drain Current
2.5 A
Rds on Drain Source Resistance
3 Ohms
Vgs Gate Source Voltage
- 20 V, + 20 V
Alternate Parts Comparison (IRF820PBF vs IRF540NPBF vs IRF540PBF vs IRF620PBF)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Series | IRF | HEXFET® | IRF | IRF |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel | 1 Channel |
| RoHS | Yes | Compliant with Exemption | Compliant with Exemption | Yes |
| Channel Mode | Enhancement | Enhancement | Enhancement | Enhancement |
| Configuration | Single | Single | Single | Single |
| Fall Time | 16 ns | 35 ns | 43 ns | 13 ns |
| Maximum Operating Temperature C | + 150 | 175 | 175 | + 150 |
| Minimum Operating Temperature C | - 55 | -55 | -55 | - 55 |
| Pd Power Dissipation | 50 W | 140 W | 150 W | 50 W |
| Qg Gate Charge | 24 nC | 47.3 nC | 72 nC | 14 nC |
| Rds on Drain Source Resistance | 3 Ohms | 44 mOhms | 77 mOhms | 800 mOhms |
| Action |
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