Vishay SIHP12N50C-E3 MOSFETs
MOSFET N-CH 500V 12A TO220AB
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SIHP12N50C-E3
Base Model
Detailed Description
MOSFET N-CH 500V 12A TO220AB
Package
TO-220-3
Lifecycle Status
Active
Datasheet
SIHP12N50C-E3 Datasheet
Quick Jump:
Technical Specifications
Vishay SIHP12N50C-E3 MOSFETs technical specifications.
General
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
Through Hole
Operating Temperature
- 55°C ~ + 150°C
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
500 V
ID Continuous Drain Current
12 A
Rds on Drain Source Resistance
555 mOhms
Vgs Gate Source Voltage
- 30 V, + 30 V
Alternate Parts Comparison (SIHP12N50C-E3 vs SIHP12N60E-GE3 vs IRF9530NPBF vs IRFZ24NPBF)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | Yes | Yes | Yes | Yes |
| Package | TO-220-3 | TO-220AB-3 | TO-220-3 | TO-220-3 |
| Mounting Type | Through Hole | Through Hole | -- | -- |
| Operating Temperature | - 55°C ~ + 150°C | - 55°C ~ + 150°C | -- | -- |
| Number of Channels | 1 Channel | 1 Channel | -- | -- |
| Channel Mode | Enhancement | Enhancement | -- | -- |
| Configuration | Single | Single | -- | -- |
| Fall Time | 6 ns | 19 ns | -- | -- |
| ID Continuous Drain Current | 12 A | 12 A | -- | -- |
| Pd Power Dissipation | 208 W | 147 W | -- | -- |
| Qg Gate Charge | 32 nC | 29 nC | -- | -- |
| Rds on Drain Source Resistance | 555 mOhms | 380 mOhms | -- | -- |
| Action |
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