Vishay IRF840PBF MOSFETs
N-Channel MOSFET, 500V, 8A, 850mR, TO-220AB
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
IRF840PBF
Detailed Description
N-Channel MOSFET, 500V, 8A, 850mR, TO-220AB
Package
TO-220-3
Lifecycle Status
Active
RoHS State
RoHS Compliant
Datasheet
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Technical Specifications
Vishay IRF840PBF MOSFETs technical specifications.
General
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
Through Hole
Operating Temperature
- 55°C ~ + 150°C
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
500 V
ID Continuous Drain Current
8 A
Rds on Drain Source Resistance
850 mOhms
Vgs Gate Source Voltage
- 20 V, + 20 V
Alternate Parts Comparison (IRF840PBF vs IRF9530NPBF vs IRF634PBF vs IRF730PBF)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | Yes | Yes | Yes | Yes |
| Package | TO-220-3 | TO-220-3 | TO-220-3 | TO-220-3 |
| Mounting Type | Through Hole | -- | Through Hole | Through Hole |
| Number of Channels | 1 Channel | -- | 1 Channel | 1 Channel |
| Channel Mode | Enhancement | -- | Enhancement | Enhancement |
| Configuration | Single | -- | Single | Single |
| ID Continuous Drain Current | 8 A | -- | 8.1 A | 5.5 A |
| Pd Power Dissipation | 125 W | -- | 74 W | 74 W |
| Qg Gate Charge | 38 nC | -- | 41 nC | 38 nC |
| Rds on Drain Source Resistance | 850 mOhms | -- | 450 mOhms | 1 Ohms |
| Technology | Si | -- | Si | Si |
| Transistor Polarity | N-Channel | -- | N-Channel | N-Channel |
| Action |
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