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Vishay SI6562DQ-T1-GE3 MOSFETs

MOSFET N/P-CH 20V 8-TSSOP

100 ActiveVishayTSSOP-8$0.71
SI6562DQ-T1-GE3 TSSOP-8 package illustration

Same model may have multiple batches, images only for reference.

SI6562DQ-T1-GE3
Manufacturer
Part Number (MPN)
SI6562DQ-T1-GE3
Detailed Description
MOSFET N/P-CH 20V 8-TSSOP
Package
TSSOP-8
Lifecycle Status
Active
Datasheet
PDF SI6562DQ-T1-GE3 Datasheet
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Technical Specifications

Vishay SI6562DQ-T1-GE3 MOSFETs technical specifications.

General

RoHS
Yes
Feature Material
Si
Feature Process Technology
TrenchFET
Feature Configuration
Dual Dual Source
Feature Channel Mode
Enhancement
Feature Channel Type
N|P
Feature Number of Elements Per Chip
2
Feature Maximum Drain Source Voltage V
20
Feature Maximum Gate Source Voltage V
±12
Feature Maximum Continuous Drain Current a
4.5@N Channel|3.5@P Channel

Related Parts Comparison (SI6562DQ-T1-GE3 vs SIP32461DB-T2-GE1 vs SIP32454DB-T2-GE1 vs SIP32401ADNP-T1GE4)

Side-by-side specifications of related catalog parts.

Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.

This PartRelated PartRelated PartRelated Part
RoHSYesYesYesYes
PackageTSSOP-8UFBGA-4UFBGA-44-UFDFNExposedPad
Package / Case--4-UFBGA4-UFBGA4-UFDFN Exposed Pad
Mounting Type--Surface MountSurface MountSurface Mount
Operating Temperature---40°C ~ 85°C (TA)-40°C ~ 125°C (TJ)-40°C ~ 125°C (TJ)
Supply Voltage--Not RequiredNot RequiredNot Required
Interface--On/OffOn/OffOn/Off
Lifecycle Status--ActiveActiveActive
Current Output Max--1.2A1.2A2.4A
Fault Protection--Reverse CurrentReverse CurrentReverse Current
Features--Slew Rate ControlledLoad Discharge, Slew Rate ControlledSlew Rate Controlled
Input Type--Non-InvertingNon-InvertingNon-Inverting
Action

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