Vishay SI2371EDS-T1-GE3 MOSFETs
Small Signal Field-Effect Transistor, 4.8A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, HALOGEN FREE AND ROHS COMPLIANT, TO-236, 3 PIN
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SI2371EDS-T1-GE3
Base Model
Detailed Description
Small Signal Field-Effect Transistor, 4.8A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, HALOGEN FREE AND ROHS COMPLIANT, TO-236, 3 PIN
Package
SOT-23
Lifecycle Status
Active
Datasheet
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Technical Specifications
Vishay SI2371EDS-T1-GE3 MOSFETs technical specifications.
General
Series
SI2
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Technology
Si
Transistor Polarity
P-Channel
Vds Drain Source Breakdown Voltage
30 V
ID Continuous Drain Current
4.8 A
Rds on Drain Source Resistance
45 mOhms
Vgs Gate Source Voltage
- 12 V, + 12 V
Related Parts Comparison (SI2371EDS-T1-GE3 vs SI2371EDS-T1-BE3 vs SIP32461DB-T2-GE1 vs SIP32454DB-T2-GE1)
Side-by-side specifications of related catalog parts.
Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.
| This Part | Related Part | Related Part | Related Part | |
|---|---|---|---|---|
| Mounting Type | SMD/SMT | SMD/SMT | Surface Mount | Surface Mount |
| RoHS | Yes | Yes | Yes | Yes |
| Package | SOT-23 | SOT23-3 | UFBGA-4 | UFBGA-4 |
| Maximum Operating Temperature C | + 150 | + 150 | + 85 | -- |
| Minimum Operating Temperature C | - 55 | - 55 | - 40 | -- |
| Pd Power Dissipation | 1.7 W | 1.7 W | 300 mW | -- |
| Unit Weight | 0.000282 oz | 0.000282 oz | 0.002420 oz | -- |
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