Vishay SI2325DS-T1-GE3 MOSFETs
P-CH JFET, -150V Vds, 530mA Id, 1.2R Rds(on), SOT-23, SM
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SI2325DS-T1-GE3
Base Model
Detailed Description
P-CH JFET, -150V Vds, 530mA Id, 1.2R Rds(on), SOT-23, SM
Package
SOT-23
Lifecycle Status
Active
RoHS State
RoHS Compliant
Datasheet
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Technical Specifications
Vishay SI2325DS-T1-GE3 MOSFETs technical specifications.
General
Series
SI2
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Technology
Si
Transistor Polarity
P-Channel
Vds Drain Source Breakdown Voltage
150 V
ID Continuous Drain Current
530 mA
Rds on Drain Source Resistance
1.2 Ohms
Vgs Gate Source Voltage
- 20 V, + 20 V
Alternate Parts Comparison (SI2325DS-T1-GE3 vs SI2325DS-T1-E3 vs SIP32461DB-T2-GE1 vs SIP32454DB-T2-GE1)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | SMD/SMT | SMD/SMT | Surface Mount | Surface Mount |
| RoHS | Yes | Yes | Yes | Yes |
| Package | SOT-23 | SOT23-3 | UFBGA-4 | UFBGA-4 |
| Series | SI2 | SI2 | SIP324x1 | -- |
| Maximum Operating Temperature C | + 150 | + 150 | + 85 | -- |
| Minimum Operating Temperature C | - 55 | - 55 | - 40 | -- |
| Pd Power Dissipation | 750 mW | 1.25 W | 300 mW | -- |
| Unit Weight | 0.000282 oz | 0.000282 oz | 0.002420 oz | -- |
| Action |
Cross Reference
Manufacturer-stated alternates from official cross-reference tools. These are not a guaranteed pin-compatible drop-in. Qualify package, pinout, and electrical limits against the datasheet before a board change. See cross-reference vs drop-in compatible .
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Browse additional parts from the same category, grouped by series, package type, and manufacturer. These are catalog suggestions — not verified pin-compatible alternates.