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Vishay SI2338DS-T1-GE3 MOSFETs

Trans MOSFET N-CH 30V 6A 3-Pin SOT-23 T/R

9,062 ActiveVishaySI2338DSSOT23-3$0.33
SI2338DS-T1-GE3 SOT23-3 package illustration

Same model may have multiple batches, images only for reference.

SI2338DS-T1-GE3
Manufacturer
Part Number (MPN)
SI2338DS-T1-GE3
Base Model
Detailed Description
Trans MOSFET N-CH 30V 6A 3-Pin SOT-23 T/R
Package
SOT23-3
Lifecycle Status
Active
Datasheet
PDF SI2338DS-T1-GE3 Datasheet
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Ordering Code Family

SI2338DS groups multiple orderable suffixes under one base device. Compare package, grade, and reel options on the base-number page before substituting within the family.

2 ordering variants listed on the family page.

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Technical Specifications

Vishay SI2338DS-T1-GE3 MOSFETs technical specifications.

General

Series
SI2
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
30 V
ID Continuous Drain Current
6 A
Rds on Drain Source Resistance
28 mOhms
Vgs Gate Source Voltage
- 20 V, + 20 V

Alternate Parts Comparison (SI2338DS-T1-GE3 vs SI2338DS-T1-BE3 vs SIP32461DB-T2-GE1 vs SIP32454DB-T2-GE1)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Mounting TypeSMD/SMTSMD/SMTSurface MountSurface Mount
RoHSYesYesYesYes
PackageSOT23-3SOT23-3UFBGA-4UFBGA-4
Pd Power Dissipation2.5 W2.5 W300 mW--
Unit Weight0.000282 oz0.000282 oz0.002420 oz--
Operating Temperature--- 55°C ~ + 150°C-40°C ~ 85°C (TA)-40°C ~ 125°C (TJ)
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