Vishay SI2336DS-T1-BE3 MOSFETs
MOSFET N-CH 30V 4.3A/5.2A SOT23
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SI2336DS-T1-BE3
Base Model
Detailed Description
MOSFET N-CH 30V 4.3A/5.2A SOT23
Package
SOT23-3
Lifecycle Status
Active
Datasheet
SI2336DS-T1-BE3 Datasheet
Quick Jump:
Technical Specifications
Vishay SI2336DS-T1-BE3 MOSFETs technical specifications.
General
Series
SI2336DS
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 150°C
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
30 V
ID Continuous Drain Current
5.2 A
Rds on Drain Source Resistance
42 mOhms
Alternate Parts Comparison (SI2336DS-T1-BE3 vs SI2336DS-T1-GE3 vs SIP32461DB-T2-GE1 vs SIP32454DB-T2-GE1)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | SMD/SMT | SMD/SMT | Surface Mount | Surface Mount |
| RoHS | Yes | Yes | Yes | Yes |
| Package | SOT23-3 | SOT23-3 | UFBGA-4 | UFBGA-4 |
| Series | SI2336DS | SI2 | SIP324x1 | -- |
| Operating Temperature | - 55°C ~ + 150°C | -- | -40°C ~ 85°C (TA) | -40°C ~ 125°C (TJ) |
| Pd Power Dissipation | 1.8 W | 1.8 W | 300 mW | -- |
| Action |
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