Vishay SI2308BDS-T1-GE3 MOSFETs
N-Channel Si MOSFET, 60V, 1.9A, TO-236AB, 3-Pin
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SI2308BDS-T1-GE3
Base Model
Detailed Description
N-Channel Si MOSFET, 60V, 1.9A, TO-236AB, 3-Pin
Package
SOT23-3
Lifecycle Status
Active
Datasheet
Quick Jump:
Technical Specifications
Vishay SI2308BDS-T1-GE3 MOSFETs technical specifications.
General
Series
SI2
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
60 V
ID Continuous Drain Current
2.3 A
Rds on Drain Source Resistance
156 mOhms
Vgs Gate Source Voltage
- 20 V, + 20 V
Alternate Parts Comparison (SI2308BDS-T1-GE3 vs SI2308BDS-T1-E3 vs SIP32461DB-T2-GE1 vs SIP32454DB-T2-GE1)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | SMD/SMT | SMD/SMT | Surface Mount | Surface Mount |
| RoHS | Yes | Yes | Yes | Yes |
| Package | SOT23-3 | SOT23-3 | UFBGA-4 | UFBGA-4 |
| Series | SI2 | SI2 | SIP324x1 | -- |
| Maximum Operating Temperature C | + 150 | + 150 | + 85 | -- |
| Minimum Operating Temperature C | - 55 | - 55 | - 40 | -- |
| Pd Power Dissipation | 1.66 W | 1.66 W | 300 mW | -- |
| Unit Weight | 0.000282 oz | 0.000282 oz | 0.002420 oz | -- |
| Action |
Cross Reference
Manufacturer-stated alternates from official cross-reference tools. These are not a guaranteed pin-compatible drop-in. Qualify package, pinout, and electrical limits against the datasheet before a board change. See cross-reference vs drop-in compatible .
Suggested replacements
NTR5198NLT1GonsemiDirectonsemi
Pin YesPkg YesElec Yes
N-Channel JFET, 60V, 2.2A, 155mΩ, SOT-23
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