Vishay SI2305DS-T1-GE3 MOSFETs
Power Field-Effect Transistor, 3.5A I(D), 8V, 0.052ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236, TO-236, 3 PIN
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SI2305DS-T1-GE3
Base Model
Detailed Description
Power Field-Effect Transistor, 3.5A I(D), 8V, 0.052ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236, TO-236, 3 PIN
Package
SOT-23
Lifecycle Status
Active
Datasheet
SI2305DS-T1-GE3 Datasheet
Quick Jump:
Technical Specifications
Vishay SI2305DS-T1-GE3 MOSFETs technical specifications.
General
RoHS
Compliant
Number of Pins
3
Package / Case
SOT-23
Mounting Type
Surface Mount
Operating Temperature
-55 °C ~ 150 °C
Continuous Drain Current ID
3.5 A
Current
58 A
Drain to Source Breakdown Voltage
8 V
Drain to Source Resistance
52mO
Drain to Source Voltage Vdss
8 V
Related Parts Comparison (SI2305DS-T1-GE3 vs SI2305DS vs SIP32461DB-T2-GE1 vs SIP32454DB-T2-GE1)
Side-by-side specifications of related catalog parts.
Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.
| This Part | Related Part | Related Part | Related Part | |
|---|---|---|---|---|
| RoHS | Compliant | Yes | Yes | Yes |
| Package / Case | SOT-23 | -- | 4-UFBGA | 4-UFBGA |
| Mounting Type | Surface Mount | -- | Surface Mount | Surface Mount |
| Operating Temperature | -55 °C ~ 150 °C | -- | -40°C ~ 85°C (TA) | -40°C ~ 125°C (TJ) |
| Package | SOT-23 | -- | UFBGA-4 | UFBGA-4 |
| Action |
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