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Vishay SI2302CDS-T1-E3 MOSFETs

N-Channel MOSFET, 20V, 2.6A, 57mR Rds On, SOT-23

3,705 ActiveVishaySI2302CDSSOT23-3$0.68
SI2302CDS-T1-E3 SOT23-3 package illustration

Same model may have multiple batches, images only for reference.

SI2302CDS-T1-E3
Manufacturer
Part Number (MPN)
SI2302CDS-T1-E3
Base Model
Detailed Description
N-Channel MOSFET, 20V, 2.6A, 57mR Rds On, SOT-23
Package
SOT23-3
Lifecycle Status
Active
Datasheet
PDF SI2302CDS-T1-E3 Datasheet
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Ordering Code Family

SI2302CDS groups multiple orderable suffixes under one base device. Compare package, grade, and reel options on the base-number page before substituting within the family.

3 ordering variants listed on the family page.

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Technical Specifications

Vishay SI2302CDS-T1-E3 MOSFETs technical specifications.

General

Series
SI2
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
20 V
ID Continuous Drain Current
2.6 A
Rds on Drain Source Resistance
57 mOhms
Vgs Gate Source Voltage
- 8 V, + 8 V

Alternate Parts Comparison (SI2302CDS-T1-E3 vs SI2302CDS-T1-GE3 vs SI2302CDS-T1-BE3 vs SIP32461DB-T2-GE1)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Mounting TypeSMD/SMTSMD/SMTSMD/SMTSurface Mount
RoHSYesYesYesYes
Maximum Operating Temperature C+ 150+ 150+ 150+ 85
Minimum Operating Temperature C- 55- 55- 55- 40
PackageSOT23-3SOT23-3SOT23-3UFBGA-4
Pd Power Dissipation710 mW860 mW860 mW300 mW
Unit Weight0.000282 oz0.000282 oz0.000282 oz0.002420 oz
SeriesSI2SI2--SIP324x1
Number of Channels1 Channel1 Channel1 Channel--
Channel ModeEnhancementEnhancementEnhancement--
ConfigurationSingleSingleSingle--
Fall Time7 ns7 ns7 ns--
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