Vishay SI1965DH-T1-GE3 MOSFETs
P-CH MOSFET 12V 1.14A 390mR SOT-363
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SI1965DH-T1-GE3
Detailed Description
P-CH MOSFET 12V 1.14A 390mR SOT-363
Package
TSSOP-6
Lifecycle Status
Active
Datasheet
SI1965DH-T1-GE3 Datasheet
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Technical Specifications
Vishay SI1965DH-T1-GE3 MOSFETs technical specifications.
General
Series
SI1
RoHS
Yes
Number of Channels
2 Channel
Mounting Type
SMD/SMT
Technology
Si
Transistor Polarity
P-Channel
Vds Drain Source Breakdown Voltage
12 V
ID Continuous Drain Current
1.3 A
Rds on Drain Source Resistance
390 mOhms
Vgs Gate Source Voltage
- 8 V, + 8 V
Alternate Parts Comparison (SI1965DH-T1-GE3 vs SIP32461DB-T2-GE1 vs SIP32454DB-T2-GE1 vs SIP32401ADNP-T1GE4)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | SMD/SMT | Surface Mount | Surface Mount | Surface Mount |
| RoHS | Yes | Yes | Yes | Yes |
| Package | TSSOP-6 | UFBGA-4 | UFBGA-4 | 4-UFDFNExposedPad |
| Series | SI1 | SIP324x1 | -- | SIP324x1 |
| Maximum Operating Temperature C | + 150 | + 85 | -- | + 85 |
| Minimum Operating Temperature C | - 55 | - 40 | -- | - 40 |
| Pd Power Dissipation | 1.25 W | 300 mW | -- | 324 mW |
| Unit Weight | 0.000265 oz | 0.002420 oz | -- | 0.001764 oz |
| Package / Case | -- | 4-UFBGA | 4-UFBGA | 4-UFDFN Exposed Pad |
| Operating Temperature | -- | -40°C ~ 85°C (TA) | -40°C ~ 125°C (TJ) | -40°C ~ 125°C (TJ) |
| Supply Voltage | -- | Not Required | Not Required | Not Required |
| Interface | -- | On/Off | On/Off | On/Off |
| Action |
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