Vishay SI1926DL-T1-BE3 MOSFETs
Trans MOSFET N-CH 60V 0.34A 6-Pin SC-70 T/R
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SI1926DL-T1-BE3
Base Model
Detailed Description
Trans MOSFET N-CH 60V 0.34A 6-Pin SC-70 T/R
Package
TSSOP-6
Lifecycle Status
Active
Datasheet
SI1926DL-T1-BE3 Datasheet
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Technical Specifications
Vishay SI1926DL-T1-BE3 MOSFETs technical specifications.
General
RoHS
Yes
Number of Channels
2 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 150°C
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
60 V
ID Continuous Drain Current
370 mA
Rds on Drain Source Resistance
1.4 Ohms
Vgs Gate Source Voltage
- 20 V, + 20 V
Alternate Parts Comparison (SI1926DL-T1-BE3 vs SI1926DL-T1-GE3 vs SI1926DL-T1-E3 vs SIP32461DB-T2-GE1)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | SMD/SMT | SMD/SMT | SMD/SMT | Surface Mount |
| RoHS | Yes | Yes | Yes | Yes |
| Package | TSSOP-6 | TSSOP-6 | TSSOP-6 | UFBGA-4 |
| Pd Power Dissipation | 510 mW | 510 mW | 510 mW | 300 mW |
| Operating Temperature | - 55°C ~ + 150°C | - 55°C ~ + 150°C | -- | -40°C ~ 85°C (TA) |
| Number of Channels | 2 Channel | 2 Channel | 2 Channel | -- |
| Channel Mode | Enhancement | Enhancement | Enhancement | -- |
| Fall Time | 14 ns | 14 ns | 14 ns | -- |
| ID Continuous Drain Current | 370 mA | 370 mA | 370 mA | -- |
| Qg Gate Charge | 1.4 nC | 1.4 nC | 900 pC | -- |
| Rds on Drain Source Resistance | 1.4 Ohms | 1.4 Ohms | 1.4 Ohms | -- |
| Rise Time | 12 ns | 12 ns | 12 ns | -- |
| Action |
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