Vishay IRLU110PBF MOSFETs
N-CH MOSFET 100V 4.3A 540mR TO-251-3
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
IRLU110PBF
Detailed Description
N-CH MOSFET 100V 4.3A 540mR TO-251-3
Package
TO-251AA
Lifecycle Status
Active
Datasheet
IRLU110PBF Datasheet
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Technical Specifications
Vishay IRLU110PBF MOSFETs technical specifications.
General
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
Through Hole
Operating Temperature
- 55°C ~ + 150°C
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
100 V
ID Continuous Drain Current
4.3 A
Rds on Drain Source Resistance
540 mOhms
Vgs Gate Source Voltage
- 10 V, + 10 V
Alternate Parts Comparison (IRLU110PBF vs IRLU2905PBF vs IRLU024NPBF vs IRLU014PBF)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | Yes | Yes | Yes | Yes |
| Package | TO-251AA | TO-251-3 | TO-251-3 | -- |
| Mounting Type | Through Hole | -- | -- | Through Hole |
| Operating Temperature | - 55°C ~ + 150°C | -- | -- | -55°C ~ 150°C (TJ) |
| Number of Channels | 1 Channel | -- | -- | 1 |
| Channel Mode | Enhancement | -- | -- | Enhancement |
| Configuration | Single | -- | -- | Single |
| Pd Power Dissipation | 25 W | -- | -- | 2.5 W |
| Qg Gate Charge | 6.1 nC | -- | -- | 8.4 nC |
| Rds on Drain Source Resistance | 540 mOhms | -- | -- | 200 mOhms |
| Technology | Si | -- | -- | Si |
| Transistor Polarity | N-Channel | -- | -- | N-Channel |
| Action |
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