Vishay CNY65B BJTs
Optocoupler Phototransistor 13.9kV Isolation, 32V VCEO, 75mA IF, DIP
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
CNY65B
Detailed Description
Optocoupler Phototransistor 13.9kV Isolation, 32V VCEO, 75mA IF, DIP
Package
DIP-4
Lifecycle Status
Active
Datasheet
CNY65B Datasheet
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Technical Specifications
Vishay CNY65B BJTs technical specifications.
General
Series
CNY
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
Through Hole
Operating Temperature
- 55°C ~ + 85°C
Isolation Voltage
8200 Vrms
Output Type
NPN Phototransistor
Current Transfer Ratio Min
100 %
Current Transfer Ratio Max
200 %
If Forward Current
75 mA
Alternate Parts Comparison (CNY65B vs CNY651AGRST vs CNY64AGRST vs CNY64ABST)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | Yes | Yes | Yes | Yes |
| Package | DIP-4 | DIP-4 | DIP-4 | DIP-4 |
| Series | CNY | -- | CNY | CNY |
| Mounting Type | Through Hole | -- | SMD/SMT | SMD/SMT |
| Number of Channels | 1 Channel | -- | 1 Channel | 1 Channel |
| Collector Emitter Breakdown Voltage | 32 V | -- | 32 V | 32 V |
| Current Transfer Ratio | 100 % | -- | 100 % | 80 % |
| Current Transfer Ratio Max | 200 % | -- | 300 % | 240 % |
| Current Transfer Ratio Min | 100 % | -- | 100 % | 80 % |
| Description Function | Optocoupler, Phototransistor Output, Very High Isolation | -- | Optocoupler, Phototransistor Output, Very High Isolation | Optocoupler, Phototransistor Output, Very High Isolation |
| Fall Time | 2.7 us | -- | 2.7 us | 2.7 us |
| Isolation Voltage | 8200 Vrms | -- | 8200 Vrms | 8200 Vrms |
| Action |
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