Vishay CNY64ABST BJTs
Optocoupler 8.2kVrms 1Ch Transistor SMD
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
CNY64ABST
Detailed Description
Optocoupler 8.2kVrms 1Ch Transistor SMD
Package
DIP-4
Lifecycle Status
Active
Datasheet
CNY64ABST Datasheet
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Technical Specifications
Vishay CNY64ABST BJTs technical specifications.
General
Series
CNY
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 85°C
Isolation Voltage
8200 Vrms
Output Type
NPN Phototransistor
Current Transfer Ratio Min
80 %
Current Transfer Ratio Max
240 %
If Forward Current
75 mA
Alternate Parts Comparison (CNY64ABST vs CNY651AGRST vs CNY64AGRST vs CNY65B)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | Yes | Yes | Yes | Yes |
| Package | DIP-4 | DIP-4 | DIP-4 | DIP-4 |
| Series | CNY | -- | CNY | CNY |
| Mounting Type | SMD/SMT | -- | SMD/SMT | Through Hole |
| Number of Channels | 1 Channel | -- | 1 Channel | 1 Channel |
| Collector Emitter Breakdown Voltage | 32 V | -- | 32 V | 32 V |
| Current Transfer Ratio | 80 % | -- | 100 % | 100 % |
| Current Transfer Ratio Max | 240 % | -- | 300 % | 200 % |
| Current Transfer Ratio Min | 80 % | -- | 100 % | 100 % |
| Description Function | Optocoupler, Phototransistor Output, Very High Isolation | -- | Optocoupler, Phototransistor Output, Very High Isolation | Optocoupler, Phototransistor Output, Very High Isolation |
| Fall Time | 2.7 us | -- | 2.7 us | 2.7 us |
| Isolation Voltage | 8200 Vrms | -- | 8200 Vrms | 8200 Vrms |
| Action |
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