Texas Instruments TPS1120D Transistors
Dual P-channel enhancement-mode MOSFET in an 8-SOIC package.
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
TPS1120D
Category
Detailed Description
Dual P-channel enhancement-mode MOSFET in an 8-SOIC package. Features a 15V Drain to Source Breakdown Voltage and 1.17A Continuous Drain Current. Offers a low Rds On Max of 180mR and a Gate to Source Voltage of 2V. Operates across a -40°C to 125°C temperature range with a Max Power Dissipation of 840mW. Surface mountable with fast switching times, including a 4.5ns Turn-On Delay Time.
Package
SOIC
Key Features
Package: SOIC
Lifecycle Status
Active
RoHS State
RoHS Compliant
Datasheet
TPS1120D Datasheet
Quick Jump:
Technical Specifications
Texas Instruments TPS1120D Transistors technical specifications.
General
RoHS
Yes
Mounting Type
Surface Mount
Operating Temperature
-40°C ~ 125°C
Package
SOIC
Continuous Drain Current ID
1.17A
Current Rating
-1.7A
Drain to Source Breakdown Voltage
15V
Drain to Source Resistance
400mR
Drain to Source Voltage Vdss
15V
Fall Time
10ns
Alternate Parts Comparison (TPS1120D vs TPS54292PWP vs TPS72018DRVR vs TPS72012DRVR)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Operating Temperature | -40°C ~ 125°C | -40°C ~ 125°C (TA) | -40°C ~ 125°C (TJ) | -40°C ~ 125°C (TJ) |
| RoHS | Yes | Yes | Yes | Yes |
| Package | SOIC | HTSSOP EP | WSON EP | WSON EP |
| Radiation Hardening | No | No | No | No |
| Polarity | P-CHANNEL | -- | Positive | Positive |
| Package / Case | -- | 16-PowerTSSOP | 6-WDFN Exposed Pad | 6-WDFN Exposed Pad |
| Number of Pins | -- | 16 | 6 | 6 |
| AEC Qualified | -- | No | No | No |
| Automotive | -- | No | No | No |
| Basic Package Type | -- | Lead-Frame SMT | Non-Lead-Frame SMT | Non-Lead-Frame SMT |
| Cage Code | -- | 01295 | 01295 | 01295 |
| Action |
Texas Instruments TPS1120D Transistors Overview
Dual P-channel enhancement-mode MOSFET in an 8-SOIC package. Features a 15V Drain to Source Breakdown Voltage and 1.17A Continuous Drain Current. Offers a low Rds On Max of 180mR and a Gate to Source Voltage of 2V. Operates across a -40°C to 125°C temperature range with a Max Power Dissipation of 840mW.
Surface mountable with fast switching times, including a 4.5ns Turn-On Delay Time.
More Parts in Transistors
Browse additional parts from the same category, grouped by series, package type, and manufacturer. These are catalog suggestions — not verified pin-compatible alternates.
CSD13380F3TTexas Instruments12-V, N channel NexFET™ power MOSFET, single LGA 0.6 mm x 0.7 mm, 76 mOhm, gate ESD protection 3-PICOSTAR -55 to 150
CSD13385F5Texas InstrumentsSingle N-channel NexFET™ power MOSFET featuring 12-V drain-source voltage and 19 mΩ on-resistance.