Texas Instruments TPS1120D Transistors
Dual P-channel enhancement-mode MOSFET in an 8-SOIC package.
Same model may have multiple batches, images only for reference.
Technical Specifications
Texas Instruments TPS1120D Transistors technical specifications.
General
Related Parts Comparison (TPS1120D vs TPS54292PWP vs TPS72018DRVR vs TPS72012DRVR)
Side-by-side specifications of related catalog parts.
Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.
| This Part | Related Part | Related Part | Related Part | |
|---|---|---|---|---|
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Operating Temperature | -40°C ~ 125°C | -40°C ~ 125°C (TA) | -40°C ~ 125°C (TJ) | -40°C ~ 125°C (TJ) |
| RoHS | Yes | Yes | Yes | Yes |
| Package | SOIC | HTSSOP EP | WSON EP | WSON EP |
| Radiation Hardening | No | No | No | No |
| Polarity | P-CHANNEL | -- | Positive | Positive |
| Package / Case | -- | 16-PowerTSSOP | 6-WDFN Exposed Pad | 6-WDFN Exposed Pad |
| Number of Pins | -- | 16 | 6 | 6 |
| Lifecycle Status | -- | Active | Active | Active |
| AEC Qualified | -- | No | No | No |
| Automotive | -- | No | No | No |
| Basic Package Type | -- | Lead-Frame SMT | Non-Lead-Frame SMT | Non-Lead-Frame SMT |
| Action |
Texas Instruments TPS1120D Transistors Overview
Dual P-channel enhancement-mode MOSFET in an 8-SOIC package. Features a 15V Drain to Source Breakdown Voltage and 1.17A Continuous Drain Current. Offers a low Rds On Max of 180mR and a Gate to Source Voltage of 2V. Operates across a -40°C to 125°C temperature range with a Max Power Dissipation of 840mW.
Surface mountable with fast switching times, including a 4.5ns Turn-On Delay Time.
More Parts in Transistors
CSD13380F3TTexas Instruments
CSD13385F5Texas Instruments