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Texas Instruments CSD25303W1015 Transistors

P-Channel NexFET Power MOSFET 6-DSBGA -55 to 150

6,560 ActiveTexas Instruments$0.79RoHS
CSD25303W1015 - No Image Available

Same model may have multiple batches, images only for reference.

CSD25303W1015
Manufacturer
Part Number (MPN)
CSD25303W1015
Category
Discrete SemiconductorsTransistorsTexas Instruments CSD25303W1015
Detailed Description
P-Channel NexFET Power MOSFET 6-DSBGA -55 to 150
Lifecycle Status
Active
RoHS State
RoHS Compliant
Datasheet
PDF CSD25303W1015 Datasheet
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Technical Specifications

Texas Instruments CSD25303W1015 Transistors technical specifications.

General

Series
NexFET™
RoHS
Yes
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C
Continuous Drain Current ID
3A
Drain to Source Breakdown Voltage
-20V
Drain to Source Resistance
56mR
Drain to Source Voltage Vdss
20V
Fall Time
7.8ns
Gate to Source Voltage Vgs
8V

Alternate Parts Comparison (CSD25303W1015 vs CSD95482RWJ vs CSD95481RWJT vs CSD43301Q5M)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Operating Temperature-55°C ~ 150°C-40°C ~ 125°C (TJ)-40°C ~ 125°C (TJ)-40°C ~ 125°C (TA)
Package / Case--41-PowerTFQFN41-PowerTFQFN12-Power LFDFN
Supply Voltage--4.5V ~ 5.5V4.5V ~ 5.5VNot Required
Interface--PWMPWMOn/Off
Fault Protection--Shoot-ThroughShoot-ThroughUVLO
Output Configuration--Half Bridge (3)Half Bridge (3)Low Side
Voltage Load--4.5V ~ 16V4.5V ~ 16V4.5V ~ 6V
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