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Texas Instruments CSD25483F4T MOSFETs

-20V, P ch NexFET MOSFET™, single LGA 0.6x1.0, 245mOhm 3-PICOSTAR -55 to 150

55,000 ActiveTexas InstrumentsCSD25483FLGA$0.71
CSD25483F4T LGA package illustration

Same model may have multiple batches, images only for reference.

CSD25483F4T
Manufacturer
Part Number (MPN)
CSD25483F4T
Base Model
Detailed Description
-20V, P ch NexFET MOSFET™, single LGA 0.6x1.0, 245mOhm 3-PICOSTAR -55 to 150
Package
LGA
Lifecycle Status
Active
Datasheet
PDF CSD25483F4T Datasheet
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Ordering Code Family

CSD25483F groups multiple orderable suffixes under one base device. Compare package, grade, and reel options on the base-number page before substituting within the family.

2 ordering variants listed on the family page.

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Technical Specifications

Texas Instruments CSD25483F4T MOSFETs technical specifications.

General

Series
CSD25483F4
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 150°C
Technology
Si
Transistor Polarity
P-Channel
Vds Drain Source Breakdown Voltage
20 V
ID Continuous Drain Current
1.6 A
Rds on Drain Source Resistance
1.07 Ohms

Related Parts Comparison (CSD25483F4T vs CSD25483F4 vs CSD75205W1015 vs CSD16322Q5C)

Side-by-side specifications of related catalog parts.

Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.

This PartRelated PartRelated PartRelated Part
Mounting TypeSMD/SMTSurface MountSurface MountSurface Mount
Operating Temperature- 55°C ~ + 150°C-55°C ~ 150°C (TJ)-55°C ~ 150°C-55°C ~ 150°C
RoHSYesYesYesYes with Exemption
SeriesCSD25483F4NexFET™--CSD16322Q5C
Channel ModeEnhancement--EnhancementEnhancement
ConfigurationSingle--DualSingle Quad Drain Triple Source
PackagePICOSTAR (YJC)-3--DSBGAVSON-CLIP EP
TechnologySiMOSFET (Metal Oxide)--Si
Schedule B--854129008085412100808541290080
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