Texas Instruments CSD25304W1015T MOSFETs
-20V, P ch NexFET MOSFET™, single WLP 1.0x1.5, 32.5mOhm 6-DSBGA -55 to 150
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
CSD25304W1015T
Base Model
Detailed Description
-20V, P ch NexFET MOSFET™, single WLP 1.0x1.5, 32.5mOhm 6-DSBGA -55 to 150
Package
DSBGA-6
Lifecycle Status
Active
Datasheet
CSD25304W1015T Datasheet
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Technical Specifications
Texas Instruments CSD25304W1015T MOSFETs technical specifications.
General
Series
CSD25304W1015
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 150°C
Technology
Si
Transistor Polarity
P-Channel
Vds Drain Source Breakdown Voltage
20 V
ID Continuous Drain Current
3 A
Rds on Drain Source Resistance
92 mOhms
Related Parts Comparison (CSD25304W1015T vs CSD25304W1015 vs CSD75205W1015 vs CSD16322Q5C)
Side-by-side specifications of related catalog parts.
Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.
| This Part | Related Part | Related Part | Related Part | |
|---|---|---|---|---|
| Mounting Type | SMD/SMT | SMD/SMT | Surface Mount | Surface Mount |
| Operating Temperature | - 55°C ~ + 150°C | - 55°C ~ + 150°C | -55°C ~ 150°C | -55°C ~ 150°C |
| RoHS | Yes | Yes | Yes | Yes with Exemption |
| Channel Mode | Enhancement | Enhancement | Enhancement | Enhancement |
| Configuration | Single | Single | Dual | Single Quad Drain Triple Source |
| Package | DSBGA-6 | DSBGA-6 | DSBGA | VSON-CLIP EP |
| Series | CSD25304W1015 | CSD25304W1015 | -- | CSD16322Q5C |
| Number of Channels | 1 Channel | 1 Channel | -- | 1 Channel |
| Fall Time | 10 ns | 10 ns | -- | 3.7 ns |
| ID Continuous Drain Current | 3 A | 3 A | -- | 100 A |
| Pd Power Dissipation | 1.5 W | 750 mW | -- | 3.1 W |
| Qg Gate Charge | 3.3 nC | 4.4 nC | -- | 6.8 nC |
| Action |
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