Texas Instruments CSD23382F4T MOSFETs
-12V, P ch NexFET MOSFET™, single LGA 0.6x1.0, 76mOhm 3-PICOSTAR -55 to 150
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
CSD23382F4T
Base Model
Detailed Description
-12V, P ch NexFET MOSFET™, single LGA 0.6x1.0, 76mOhm 3-PICOSTAR -55 to 150
Package
PICOSTAR (YJC)-3
Lifecycle Status
Active
Datasheet
CSD23382F4T Datasheet
Quick Jump:
Technical Specifications
Texas Instruments CSD23382F4T MOSFETs technical specifications.
General
Series
CSD23382F4
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 150°C
Technology
Si
Transistor Polarity
P-Channel
Vds Drain Source Breakdown Voltage
12 V
ID Continuous Drain Current
3.5 A
Rds on Drain Source Resistance
199 mOhms
Alternate Parts Comparison (CSD23382F4T vs CSD23382F4 vs CSD75205W1015 vs CSD16322Q5C)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | SMD/SMT | Surface Mount | Surface Mount | Surface Mount |
| Operating Temperature | - 55°C ~ + 150°C | -55°C ~ 150°C (TJ) | -55°C ~ 150°C | -55°C ~ 150°C |
| RoHS | Yes | Yes | Yes | Yes with Exemption |
| Series | CSD23382F4 | FemtoFET™ | -- | CSD16322Q5C |
| Channel Mode | Enhancement | -- | Enhancement | Enhancement |
| Configuration | Single | -- | Dual | Single Quad Drain Triple Source |
| Package | PICOSTAR (YJC)-3 | -- | DSBGA | VSON-CLIP EP |
| Technology | Si | MOSFET (Metal Oxide) | -- | Si |
| Number of Pins | -- | 3 | 6 | 8 |
| Schedule B | -- | 8541290080 | 8541210080 | 8541290080 |
| Action |
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