Texas Instruments CSD19531Q5AT MOSFETs
100-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 6.4 mOhm 8-VSONP -55 to 150
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
CSD19531Q5AT
Base Model
Detailed Description
100-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 6.4 mOhm 8-VSONP -55 to 150
Package
VSONP-8
Lifecycle Status
Active
Datasheet
CSD19531Q5AT Datasheet
Quick Jump:
Technical Specifications
Texas Instruments CSD19531Q5AT MOSFETs technical specifications.
General
RoHS
Yes
Vds V
100
Configuration
Single
Rds on at Vgs 10 V Max M
6.4
Idm Pulsed Drain Current Max a
337
Qg Typ Nc
37
Qgd Typ Nc
6.6
Qgs Typ Nc
10.5
Vgs V
20
Vgsth Typ Typ V
2.7
Alternate Parts Comparison (CSD19531Q5AT vs CSD19531Q5A vs CSD75205W1015 vs CSD16322Q5C)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | Yes | Yes | Yes | Yes with Exemption |
| Configuration | Single | Single | Dual | Single Quad Drain Triple Source |
| Package | VSONP-8 | VSONP-8 | DSBGA | VSON-CLIP EP |
| ID Silicon Limited at Tc 25 Ca | 110 | 110 | -- | -- |
| Idm Pulsed Drain Current Max a | 337 | 337 | -- | -- |
| Logic Level | No | No | -- | -- |
| Operating Temperature Range C | -55 to 150 | -55 to 150 | -- | -- |
| Qg Typ Nc | 37 | 37 | -- | -- |
| Qgd Typ Nc | 6.6 | 6.6 | -- | -- |
| Qgs Typ Nc | 10.5 | 10.5 | -- | -- |
| Rds on at Vgs 10 V Max M | 6.4 | 6.4 | -- | -- |
| Vds V | 100 | 100 | -- | -- |
| Action |
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