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Texas Instruments CSD16401Q5 MOSFETs

N-channel NexFET™ MOSFET, single element, 25V drain-source breakdown voltage, 1.6mΩ Rds On Max at 1.5V Vgs.

5,000 ActiveTexas InstrumentsNexFET™CSD16401QSON$3.39RoHS
CSD16401Q5 - No Image Available

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CSD16401Q5
Manufacturer
Texas Instruments
Part Number (MPN)
CSD16401Q5
Category
Discrete SemiconductorsTransistorsMOSFETs
Series
NexFET™
Base Model
CSD16401Q
Detailed Description
Package
SON
Key Features
Package: SON
Lifecycle Status
Active
RoHS State
Compliant
Datasheet
PDF CSD16401Q5 Datasheet
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Ordering Code Family

CSD16401Q groups multiple orderable suffixes under one base device. Compare package, grade, and reel options on the base-number page before substituting within the family.

2 ordering variants listed on the family page.

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Technical Specifications

Texas Instruments CSD16401Q5 MOSFETs technical specifications.

General

Package
SON
Contact Plating
Tin, Matte
Continuous Drain Current ID
100A
Drain to Source Breakdown Voltage
25V
Drain to Source Voltage Vdss
25V
Dual Supply Voltage
25V
Element Configuration
Single
Fall Time
12.7ns
Gate to Source Voltage Vgs
16V
Height
1.05mm

Texas Instruments CSD16401Q5 MOSFETs Overview

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