Texas Instruments CSD16407Q5 MOSFETs
N-channel NexFET™ MOSFET, single element configuration, offering a 25V drain-to-source breakdown voltage and a low 2.4mΩ Rds On at a nominal 1.6V Vgs.
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
CSD16407Q5
Detailed Description
Package
SON
Key Features
Package: SON
Lifecycle Status
Active
RoHS State
Compliant
Datasheet
CSD16407Q5 Datasheet
Quick Jump:
Technical Specifications
Texas Instruments CSD16407Q5 MOSFETs technical specifications.
General
Package
SON
Contact Plating
Tin, Matte
Continuous Drain Current ID
100A
Drain to Source Breakdown Voltage
25V
Drain to Source Voltage Vdss
25V
Dual Supply Voltage
25V
Element Configuration
Single
Fall Time
9ns
Gate to Source Voltage Vgs
16V
Height
1.05mm
Texas Instruments CSD16407Q5 MOSFETs Overview
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