STMicroelectronics STPSC8H065G-TR Rectifier Diodes
650 V, 8 A High surge Silicon Carbide Power Schottky Diode
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
STPSC8H065G-TR
Base Model
Detailed Description
650 V, 8 A High surge Silicon Carbide Power Schottky Diode
Package
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Lifecycle Status
Obsolete
Datasheet
STPSC8H065G-TR Datasheet
Quick Jump:
Technical Specifications
STMicroelectronics STPSC8H065G-TR Rectifier Diodes technical specifications.
General
Package / Case
TO-263-3, D2PAK
Mounting Type
Surface Mount
Lifecycle Status
Obsolete
Reverse Recovery Time Trr
0 ns
Current Reverse Leakage Vr
80 µA @ 650 V
Capacitance Vr F
414pF @ 0V, 1MHz
Technology
SiC (Silicon Carbide) Schottky
Voltage Dc Reverse Vr Max
650 V
Current Average Rectified IO
8A
Operating Temperature Junction
-40°C ~ 175°C
Related Parts Comparison (STPSC8H065G-TR vs STPSC8H065DI vs STPSC8H065BY-TR vs STPSC8H065DLF)
Side-by-side specifications of related catalog parts.
Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.
| This Part | Related Part | Related Part | Related Part | |
|---|---|---|---|---|
| Package / Case | TO-263-3, D2PAK | TO-220-2 Insulated, TO-220AC | TO-252-3, DPAK | 4-PowerVDFN |
| Mounting Type | Surface Mount | Through Hole | Surface Mount | Surface Mount |
| Lifecycle Status | Obsolete | Active | Active | Active |
| Current Average Rectified IO | 8A | 8A | 8A | 8A |
| Current Reverse Leakage Vr | 80 µA @ 650 V | 80 µA @ 650 V | 80 µA @ 650 V | 80 µA @ 650 V |
| Operating Temperature Junction | -40°C ~ 175°C | -40°C ~ 175°C | -40°C ~ 175°C | -40°C ~ 175°C |
| Speed | Zero Recovery Time > 500mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Zero Recovery Time > 500mA (Io) | Zero Recovery Time > 500mA (Io) |
| Technology | SiC (Silicon Carbide) Schottky | SiC (Silicon Carbide) Schottky | SiC (Silicon Carbide) Schottky | SiC (Silicon Carbide) Schottky |
| Voltage Dc Reverse Vr Max | 650 V | 650 V | 650 V | 650 V |
| Capacitance Vr F | 414pF @ 0V, 1MHz | -- | 414pF @ 0V, 1MHz | 460pF @ 0V, 1MHz |
| Reverse Recovery Time Trr | 0 ns | -- | 0 ns | 0 ns |
| Voltage Forward Vf Max If | 1.75 V @ 8 A | 1.75 V @ 8 A | -- | 1.55 V @ 8 A |
| Action |
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