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STMicroelectronics STPSC10H12GY-TR Rectifier Diodes

Automotive 1200 V, 10 A Silicon Carbide Power Schottky Diode

1,749STMicroelectronicsSTPSC10HTO-263-3, D2PAK (2 Leads + Tab), TO-263AB$22.78
STPSC10H12GY-TR TO-263-3, D2PAK (2 Leads + Tab), TO-263AB package illustration

Same model may have multiple batches, images only for reference.

STPSC10H12GY-TR
Manufacturer
Part Number (MPN)
STPSC10H12GY-TR
Base Model
Detailed Description
Automotive 1200 V, 10 A Silicon Carbide Power Schottky Diode
Package
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Lifecycle Status
Obsolete
Datasheet
PDF STPSC10H12GY-TR Datasheet
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Ordering Code Family

STPSC10H groups multiple orderable suffixes under one base device. Compare package, grade, and reel options on the base-number page before substituting within the family.

11 ordering variants listed on the family page.

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Technical Specifications

STMicroelectronics STPSC10H12GY-TR Rectifier Diodes technical specifications.

General

Series
ECOPACK®2
Package / Case
TO-263-3, D2PAK
Mounting Type
Surface Mount
Lifecycle Status
Obsolete
Reverse Recovery Time Trr
0 ns
Current Reverse Leakage Vr
60 µA @ 1200 V
Capacitance Vr F
725pF @ 0V, 1MHz
Grade
Automotive
Qualification
AEC-Q101
Technology
SiC (Silicon Carbide) Schottky

Related Parts Comparison (STPSC10H12GY-TR vs STPSC10H065DI vs STPSC10H12CWL vs STPSC10H065D)

Side-by-side specifications of related catalog parts.

Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.

This PartRelated PartRelated PartRelated Part
Package / CaseTO-263-3, D2PAKTO-220-2 Insulated, TO-220ACTO-247-3TO-220-2
Mounting TypeSurface MountThrough HoleThrough HoleThrough Hole
Lifecycle StatusObsoleteActiveObsoleteActive
Current Reverse Leakage Vr60 µA @ 1200 V100 µA @ 650 V30 µA @ 1200 V100 µA @ 650 V
Operating Temperature Junction-40°C ~ 175°C-40°C ~ 175°C-40°C ~ 175°C-40°C ~ 175°C
SpeedZero Recovery Time > 500mA (Io)Fast Recovery =< 500ns, > 200mA (Io)No Recovery Time > 500mA (Io)Zero Recovery Time > 500mA (Io)
TechnologySiC (Silicon Carbide) SchottkySiC (Silicon Carbide) SchottkySiC (Silicon Carbide) SchottkySiC (Silicon Carbide) Schottky
Voltage Dc Reverse Vr Max1200 V650 V1200 V650 V
Voltage Forward Vf Max If1.5 V @ 10 A1.75 V @ 10 A1.5 V @ 5 A1.75 V @ 10 A
Current Average Rectified IO10A10A--10A
GradeAutomotiveIndustrial--Industrial
Reverse Recovery Time Trr0 ns--0 ns0 ns
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