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STMicroelectronics STPSC10H12CWL Rectifier Diodes

1200 V, 10 A dual High Surge Silicon Carbide Power Schottky Diode

22STMicroelectronicsSTPSC10HTO-247-3$18.54
STPSC10H12CWL TO-247-3 package illustration

Same model may have multiple batches, images only for reference.

STPSC10H12CWL
Manufacturer
Part Number (MPN)
STPSC10H12CWL
Base Model
Detailed Description
1200 V, 10 A dual High Surge Silicon Carbide Power Schottky Diode
Package
TO-247-3
Lifecycle Status
Obsolete
Datasheet
PDF STPSC10H12CWL Datasheet
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Ordering Code Family

STPSC10H groups multiple orderable suffixes under one base device. Compare package, grade, and reel options on the base-number page before substituting within the family.

11 ordering variants listed on the family page.

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Technical Specifications

STMicroelectronics STPSC10H12CWL Rectifier Diodes technical specifications.

General

Series
ECOPACK®
Package / Case
TO-247-3
Mounting Type
Through Hole
Lifecycle Status
Obsolete
Voltage Forward Vf Max If
1.5 V @ 5 A
Speed
No Recovery Time > 500mA (Io)
Reverse Recovery Time Trr
0 ns
Current Reverse Leakage Vr
30 µA @ 1200 V
Operating Temperature Junction
-40°C ~ 175°C
Diode Configuration
1 Pair Common Cathode

Related Parts Comparison (STPSC10H12CWL vs STPSC10H065DI vs STPSC10H065GY-TR vs STPSC10H065D)

Side-by-side specifications of related catalog parts.

Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.

This PartRelated PartRelated PartRelated Part
Package / CaseTO-247-3TO-220-2 Insulated, TO-220ACTO-263-3, D2PAKTO-220-2
Mounting TypeThrough HoleThrough HoleSurface MountThrough Hole
Lifecycle StatusObsoleteActiveActiveActive
Current Reverse Leakage Vr30 µA @ 1200 V100 µA @ 650 V100 µA @ 650 V100 µA @ 650 V
Operating Temperature Junction-40°C ~ 175°C-40°C ~ 175°C-40°C ~ 175°C-40°C ~ 175°C
SpeedNo Recovery Time > 500mA (Io)Fast Recovery =< 500ns, > 200mA (Io)Zero Recovery Time > 500mA (Io)Zero Recovery Time > 500mA (Io)
TechnologySiC (Silicon Carbide) SchottkySiC (Silicon Carbide) SchottkySiC (Silicon Carbide) SchottkySiC (Silicon Carbide) Schottky
Voltage Dc Reverse Vr Max1200 V650 V650 V650 V
Voltage Forward Vf Max If1.5 V @ 5 A1.75 V @ 10 A1.75 V @ 10 A1.75 V @ 10 A
Reverse Recovery Time Trr0 ns--0 ns0 ns
Current Average Rectified IO--10A10A10A
Grade--IndustrialAutomotiveIndustrial
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