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STMicroelectronics STPSC10H065G-TR Rectifier Diodes

650 V, 10 A High Surge Silicon Carbide Power Schottky Diode

15 ActiveSTMicroelectronicsSTPSC10HTO-263-3, D2PAK (2 Leads + Tab), TO-263AB$5.73
STPSC10H065G-TR TO-263-3, D2PAK (2 Leads + Tab), TO-263AB package illustration

Same model may have multiple batches, images only for reference.

STPSC10H065G-TR
Manufacturer
Part Number (MPN)
STPSC10H065G-TR
Base Model
Detailed Description
650 V, 10 A High Surge Silicon Carbide Power Schottky Diode
Package
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Lifecycle Status
Active
Datasheet
PDF STPSC10H065G-TR Datasheet
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Ordering Code Family

STPSC10H groups multiple orderable suffixes under one base device. Compare package, grade, and reel options on the base-number page before substituting within the family.

11 ordering variants listed on the family page.

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Technical Specifications

STMicroelectronics STPSC10H065G-TR Rectifier Diodes technical specifications.

General

Package / Case
TO-263-3, D2PAK
Mounting Type
Surface Mount
Lifecycle Status
Active
Reverse Recovery Time Trr
0 ns
Current Reverse Leakage Vr
100 µA @ 650 V
Capacitance Vr F
480pF @ 0V, 1MHz
Technology
SiC (Silicon Carbide) Schottky
Voltage Dc Reverse Vr Max
650 V
Current Average Rectified IO
10A
Operating Temperature Junction
-40°C ~ 175°C

Related Parts Comparison (STPSC10H065G-TR vs STPSC10H12CWL vs STPSC10H065DI vs STPSC10H12DY)

Side-by-side specifications of related catalog parts.

Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.

This PartRelated PartRelated PartRelated Part
Package / CaseTO-263-3, D2PAKTO-247-3TO-220-2 Insulated, TO-220ACTO-220-2
Mounting TypeSurface MountThrough HoleThrough HoleThrough Hole
Lifecycle StatusActiveObsoleteActiveObsolete
Current Reverse Leakage Vr100 µA @ 650 V30 µA @ 1200 V100 µA @ 650 V60 µA @ 1200 V
Operating Temperature Junction-40°C ~ 175°C-40°C ~ 175°C-40°C ~ 175°C-40°C ~ 175°C
SpeedZero Recovery Time > 500mA (Io)No Recovery Time > 500mA (Io)Fast Recovery =< 500ns, > 200mA (Io)Zero Recovery Time > 500mA (Io)
TechnologySiC (Silicon Carbide) SchottkySiC (Silicon Carbide) SchottkySiC (Silicon Carbide) SchottkySiC (Silicon Carbide) Schottky
Voltage Dc Reverse Vr Max650 V1200 V650 V1200 V
Voltage Forward Vf Max If1.75 V @ 10 A1.5 V @ 5 A1.75 V @ 10 A1.5 V @ 10 A
Current Average Rectified IO10A--10A10A
Reverse Recovery Time Trr0 ns0 ns--0 ns
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