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STMicroelectronics STP18N65M2 MOSFETs

N-channel 650 V, 0.275 Ohm typ., 12 A MDmesh M2 Power MOSFET in TO-220 package

1,000 ActiveSTMicroelectronicsSTP18NTO-220$3.08
STP18N65M2 - No Image Available

Same model may have multiple batches, images only for reference.

STP18N65M2
Manufacturer
Part Number (MPN)
STP18N65M2
Base Model
Detailed Description
N-channel 650 V, 0.275 Ohm typ., 12 A MDmesh M2 Power MOSFET in TO-220 package
Package
TO-220
Lifecycle Status
Active
Datasheet
PDF STP18N65M2 Datasheet
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Ordering Code Family

STP18N groups multiple orderable suffixes under one base device. Compare package, grade, and reel options on the base-number page before substituting within the family.

5 ordering variants listed on the family page.

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Technical Specifications

STMicroelectronics STP18N65M2 MOSFETs technical specifications.

General

Series
MDmesh™ M2
Package / Case
TO-220-3
Mounting Type
Through Hole
Operating Temperature
150°C (TJ)
Lifecycle Status
Active
Vgs Th Max ID
4V @ 250µA
Gate Charge Qg Max Vgs
20 nC @ 10 V
Vgs Max
±25V
Input Capacitance Ciss Max Vds
770 pF @ 100 V
Power Dissipation Max
110W (Tc)

Alternate Parts Comparison (STP18N65M2 vs STP18N60DM2 vs STP18N55M5 vs STP18N60M2)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
SeriesMDmesh™ M2MDmesh™ DM2MDmesh™ VMDmesh™ II Plus
Package / CaseTO-220-3TO-220-3TO-220-3TO-220-3
Mounting TypeThrough HoleThrough HoleThrough HoleThrough Hole
Operating Temperature150°C (TJ)150°C (TJ)150°C (TJ)-55°C ~ 150°C (TJ)
Lifecycle StatusActiveLast Time BuyActiveActive
Current Continuous Drain ID 25 C12A (Tc)12A (Tc)16A (Tc)13A (Tc)
Description--------
Detailed Description--------
Drain to Source Voltage Vdss650 V600 V550 V600 V
Drive Voltage Max Rds on Min Rds on10V10V10V10V
Fet TypeN-ChannelN-ChannelN-ChannelN-Channel
Gate Charge Qg Max Vgs20 nC @ 10 V20 nC @ 10 V31 nC @ 10 V21.5 nC @ 10 V
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