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STMicroelectronics STP18N55M5 MOSFETs

550V N-Channel MOSFET, 16A, 192mR Rds On, TO-220

1,000 ActiveSTMicroelectronicsSTP18NTO-220$4.26
STP18N55M5 - No Image Available

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STP18N55M5
Manufacturer
Part Number (MPN)
STP18N55M5
Base Model
Detailed Description
550V N-Channel MOSFET, 16A, 192mR Rds On, TO-220
Package
TO-220
Lifecycle Status
Active
Datasheet
PDF STP18N55M5 Datasheet
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Ordering Code Family

STP18N groups multiple orderable suffixes under one base device. Compare package, grade, and reel options on the base-number page before substituting within the family.

5 ordering variants listed on the family page.

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Technical Specifications

STMicroelectronics STP18N55M5 MOSFETs technical specifications.

General

Series
MDmesh™ V
Package / Case
TO-220-3
Mounting Type
Through Hole
Operating Temperature
150°C (TJ)
Lifecycle Status
Active
Vgs Th Max ID
5V @ 250µA
Gate Charge Qg Max Vgs
31 nC @ 10 V
Vgs Max
±25V
Input Capacitance Ciss Max Vds
1260 pF @ 100 V
Power Dissipation Max
110W (Tc)

Alternate Parts Comparison (STP18N55M5 vs STP18N60DM2 vs STP18N65M2 vs STP18N60M2)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
SeriesMDmesh™ VMDmesh™ DM2MDmesh™ M2MDmesh™ II Plus
Package / CaseTO-220-3TO-220-3TO-220-3TO-220-3
Mounting TypeThrough HoleThrough HoleThrough HoleThrough Hole
Operating Temperature150°C (TJ)150°C (TJ)150°C (TJ)-55°C ~ 150°C (TJ)
Lifecycle StatusActiveLast Time BuyActiveActive
Current Continuous Drain ID 25 C16A (Tc)12A (Tc)12A (Tc)13A (Tc)
Description--------
Detailed Description--------
Drain to Source Voltage Vdss550 V600 V650 V600 V
Drive Voltage Max Rds on Min Rds on10V10V10V10V
Fet TypeN-ChannelN-ChannelN-ChannelN-Channel
Gate Charge Qg Max Vgs31 nC @ 10 V20 nC @ 10 V20 nC @ 10 V21.5 nC @ 10 V
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