STMicroelectronics STP11NM80 MOSFETs
800V 11A N-CH MOSFET TO-220 400mR Rds(on)
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
STP11NM80
Base Model
Detailed Description
800V 11A N-CH MOSFET TO-220 400mR Rds(on)
Package
TO-220
Lifecycle Status
Active
Datasheet
STP11NM80 Datasheet
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Technical Specifications
STMicroelectronics STP11NM80 MOSFETs technical specifications.
General
Series
MDmesh™
Package / Case
TO-220-3
Mounting Type
Through Hole
Operating Temperature
-65°C ~ 150°C (TJ)
Lifecycle Status
Active
Vgs Th Max ID
5V @ 250µA
Gate Charge Qg Max Vgs
43.6 nC @ 10 V
Vgs Max
±30V
Input Capacitance Ciss Max Vds
1630 pF @ 25 V
Power Dissipation Max
150W (Tc)
Alternate Parts Comparison (STP11NM80 vs STP11NM60FD vs STP11NM60ND vs STP11NM60)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Series | MDmesh™ | FDmesh™ | FDmesh™ II | MDmesh™ |
| Package / Case | TO-220-3 | TO-220-3 | TO-220-3 | TO-220-3 |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Lifecycle Status | Active | Active | Obsolete | Not For New Designs |
| Current Continuous Drain ID 25 C | 11A (Tc) | 11A (Tc) | 10A (Tc) | 11A (Tc) |
| Description | -- | -- | -- | -- |
| Detailed Description | -- | -- | -- | -- |
| Drain to Source Voltage Vdss | 800 V | 600 V | 600 V | 650 V |
| Drive Voltage Max Rds on Min Rds on | 10V | 10V | 10V | 10V |
| Fet Type | N-Channel | N-Channel | N-Channel | N-Channel |
| Gate Charge Qg Max Vgs | 43.6 nC @ 10 V | 40 nC @ 10 V | 30 nC @ 10 V | 30 nC @ 10 V |
| Input Capacitance Ciss Max Vds | 1630 pF @ 25 V | 900 pF @ 25 V | 850 pF @ 50 V | 1000 pF @ 25 V |
| Action |
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