STMicroelectronics STP11NM60 MOSFETs
600V N-CH MOSFET 11A 450mR TO-220 Power Transistor
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
STP11NM60
Base Model
Detailed Description
600V N-CH MOSFET 11A 450mR TO-220 Power Transistor
Package
TO-220
Lifecycle Status
Not For New Designs
Datasheet
STP11NM60 Datasheet
Quick Jump:
Technical Specifications
STMicroelectronics STP11NM60 MOSFETs technical specifications.
General
Series
MDmesh™
Package / Case
TO-220-3
Mounting Type
Through Hole
Operating Temperature
-65°C ~ 150°C (TJ)
Lifecycle Status
Not For New Designs
Vgs Th Max ID
5V @ 250µA
Gate Charge Qg Max Vgs
30 nC @ 10 V
Vgs Max
±25V
Input Capacitance Ciss Max Vds
1000 pF @ 25 V
Power Dissipation Max
160W (Tc)
Alternate Parts Comparison (STP11NM60 vs STP11NM60FD vs STP11NM80 vs STP11NM60ND)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Series | MDmesh™ | FDmesh™ | MDmesh™ | FDmesh™ II |
| Package / Case | TO-220-3 | TO-220-3 | TO-220-3 | TO-220-3 |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Lifecycle Status | Not For New Designs | Active | Active | Obsolete |
| Current Continuous Drain ID 25 C | 11A (Tc) | 11A (Tc) | 11A (Tc) | 10A (Tc) |
| Drain to Source Voltage Vdss | 650 V | 600 V | 800 V | 600 V |
| Drive Voltage Max Rds on Min Rds on | 10V | 10V | 10V | 10V |
| Fet Type | N-Channel | N-Channel | N-Channel | N-Channel |
| Gate Charge Qg Max Vgs | 30 nC @ 10 V | 40 nC @ 10 V | 43.6 nC @ 10 V | 30 nC @ 10 V |
| Input Capacitance Ciss Max Vds | 1000 pF @ 25 V | 900 pF @ 25 V | 1630 pF @ 25 V | 850 pF @ 50 V |
| Power Dissipation Max | 160W (Tc) | 160W (Tc) | 150W (Tc) | 90W (Tc) |
| Rds on Max ID Vgs | 450mOhm @ 5.5A, 10V | 450mOhm @ 5.5A, 10V | 400mOhm @ 5.5A, 10V | 450mOhm @ 5A, 10V |
| Action |
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