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STMicroelectronics STI6N80K5 MOSFETs

N-channel 800 V, 1.3 Ohm typ., 4.5 A MDmesh K5 Power MOSFET in an I2PAK package

910STMicroelectronicsTO-262 (I2PAK)$2.38
STI6N80K5 TO-262 (I2PAK) package illustration

Same model may have multiple batches, images only for reference.

STI6N80K5
Manufacturer
Part Number (MPN)
STI6N80K5
Detailed Description
N-channel 800 V, 1.3 Ohm typ., 4.5 A MDmesh K5 Power MOSFET in an I2PAK package
Package
TO-262 (I2PAK)
Lifecycle Status
Obsolete
Datasheet
PDF STI6N80K5 Datasheet
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Technical Specifications

STMicroelectronics STI6N80K5 MOSFETs technical specifications.

General

Series
SuperMESH5™
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Obsolete
Vgs Th Max ID
5V @ 100µA
Gate Charge Qg Max Vgs
7.5 nC @ 10 V
Vgs Max
30V
Input Capacitance Ciss Max Vds
255 pF @ 100 V
Power Dissipation Max
85W (Tc)

Alternate Parts Comparison (STI6N80K5 vs STI24NM60N vs STI47N60DM6AG vs STI20N65M5)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
SeriesSuperMESH5™MDmesh™ IIMDmesh™ DM6MDmesh™ V
Package / CaseTO-262-3 Long Leads, I2PAK, TO-262AATO-262-3TO-262-3 Long Leads, I2PAK, TO-262AATO-262-3 Long Leads, I2PAK, TO-262AA
Mounting TypeThrough HoleThrough HoleThrough HoleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
Lifecycle StatusObsoleteNot For New DesignsActiveActive
Current Continuous Drain ID 25 C4.5A (Tc)17A (Tc)36A (Tc)18A (Tc)
Drain to Source Voltage Vdss800 V600 V600 V650 V
Drive Voltage Max Rds on Min Rds on10V10 V10V10V
Fet TypeN-ChannelN-ChannelN-ChannelN-Channel
Gate Charge Qg Max Vgs7.5 nC @ 10 V46 nC @ 10 V55 nC @ 10 V36 nC @ 10 V
Input Capacitance Ciss Max Vds255 pF @ 100 V1400 pF @ 50 V2350 pF @ 100 V1434 pF @ 100 V
Rds on Max ID Vgs1.6Ohm @ 2A, 10V190mOhm @ 8A, 10V80mOhm @ 18A, 10V190mOhm @ 9A, 10V
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